Databook.fxp 1/13/99 2:09 PM Page B-10 B-10 01/99 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Mixers Oscillators VHF Amplifiers Small Signal Amplifiers 2N4220 2N4220A NJ16 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 150 °C) Min V(BR)GSS Gate Reverse Current IGSS Gate Source Voltage VGS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max – 30 – 0.5 (50) 2N4221 2N4221A NJ16 Min Max – 30 2N4222 2N4222A NJ32 Min Process Max Unit Test Conditions V IG = – 1µA, VDS = ØV – 0.1 – 0.1 – 0.1 nA VGS = – 15V, VDS = ØV – 0.1 – 0.1 – 0.1 µA VGS = – 15V, VDS = ØV – 2.5 – 1 –5 –2 –6 (50) (200) (200) (500) (500) V µA VDS = 15V, ID = ( ) –8 V VDS = 15V, ID = 0.1 nA –4 – 30 – 30 V 10 mA 300 mW 2 mW/°C –6 TA = 150°C 0.5 3 2 6 5 15 mA VDS = 15V, VGS = ØV 4000 2000 5000 2500 6000 µS VDS = 15V, VGS = ØV f = 1 kHz µS VDS = 15V, VGS = ØV f = 100 MHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 1000 Common Source Forward Transmittance | Yfs | 750 Common Source Output Conductance gos 10 20 40 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 6 6 6 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 2 2 2 pF VDS = 15V, VGS = ØV f = 1 MHz Noise Figure 2N4220A, 2N4221A, 2N4222A NF 2.5 2.5 2.5 dB VDS = 15V, VGS = ØV RG = 1 MΩ f = 100 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 750 750 TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com