Databook.fxp 1/14/99 1:50 PM Page B-29 B-29 01/99 IF142 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IF142 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage Gate Source Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) VGS(OFF) VGS VGS(F) IDSS Process NJ14AL Max – 25 5 – 20 V 10 mA 375 mW 3 mW/°C – 65°C to 200°C Unit Test Conditions V IG = – 1 µA, VDS = ØV – 0.1 nA VGS = – 15V, VDS = ØV – 0.2 –6 –5 1 15 nA V V V mA VGS = – 15V, VDS = ØV VDS = 15V, ID = 5 nA VDS = 15V, ID = 50 µA VDS = Ø, IG = 1 mA VDS = 15V, VGS = ØV TA = 150°C mS VDS = 15V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs Common Source Output Conductance Yos 0.05 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 3 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 0.6 pF VDS = 15V, VGS = ØV f = 1 MHz nV/√Hz VDS = 12V, VGS = ØV f = 10 Hz 3.5 Typ Equivalent Short Circuit Input Noise Voltage e¯ N TOÐ236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com 4 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375