Databook.fxp 1/14/99 1:51 PM Page B-36 B-36 01/99 IF4500 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier At 25°C free air temperature: Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF4500 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ450L Max – 20 – 0.35 5 – 20 V 10 mA 225 mW 1.8 mW/°C – 65°C to 200°C – 0.1 – 1.5 Unit Test Conditions V IG = – 1 µA, VDS = ØV nA V mA VGS = – 30V, VDS = ØV VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = ØV mS VDS = 15V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 35 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 8 pF VDS = 15V, VGS = ØV f = 1 MHz nV/√Hz VDS = 12V, VGS = ØV f = 1 kHz 15 Typ Equivalent Short Circuit Input Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 1.5 TOÐ236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com