Databook.fxp 1/13/99 2:09 PM Page B-50 B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: J110 Static Electrical Characteristics Min J110A Max Gate Source Breakdown Voltage V(BR)GSS – 25 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) 3 Drain Source ON Resistance rds(on) Drain Gate Capacitance Min Max – 25 –3 – 0.5 –4 10 – 0.5 Process NJ450 Unit Test Conditions V IG = – 1 µA, VDS = ØV –3 nA VGS = – 15V, VDS = ØV –4 V VDS = 5V, ID = 1 µA 10 – 25 V 50 mA 360 mW 3.27 mW/°C mA VDS = 15V, VGS = ØV 3 nA VDS = 5V, VGS = – 10V 18 25 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz Cgd 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Source Gate Capacitance Cgs 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = ØV f = 1 MHz Dynamic Electrical Characteristics Switching Characteristics Typ Typ Turn ON Delay Time td(on) 4 4 ns Rise Time tr 1 1 ns Turn OFF Delay Time td(off) 6 6 ns Fall Time tf 30 30 ns VDD VGS(OFF) RL J110 J110A 1.5 –5 150 1.5 –5 150 TOÐ226AA Package Surface Mount Dimensions in Inches (mm) SMPJ110, SMPJ110A V V Ω Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com