High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE(sat) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IL(RMS) ICM TC TC TC TC 160 80 75 300 A A A A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load ICM = 160 @ 0.8 VCES A tsc SCSOA VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 5 Ω, non-repetitive 10 µs PC TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C = = = = 25°C 90°C 90°C 25°C, 1 ms Maximum Ratings (silicon chip capability) (silicon chip capability) (silicon chip capability) TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 Symbol Test Conditions BVCES IC = 500 µA, VGE = 0 V VGE(th) IC = 8 mA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved 6 10 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C G (TAB) C E TO-264 AA (IXSK) G C 0.4/6 Nm/lb.in. PLUS 247 TO-264 PLUS 247TM (IXSX) V 8 V 200 2 µA mA ±200 nA 2.5 V G = Gate C = Collector (TAB) E E = Emitter TAB = Collector Features ! International standard packages ! Very high current, fast switching IGBT ! Low VCE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Applications ! AC motor speed control ! DC servo and robot drives ! DC choppers ! Uninterruptible power supplies (UPS) ! Switch-mode and resonant-mode power supplies Advantages ! PLUS 247TM package for clip or spring mounting ! Space savings ! High power density 98721B (07/02) IXSK 80N60B IXSX 80N60B Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 60 A; VCE = 10 V, 52 PLUS 247TM Outline S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes 6600 pF 660 pF 196 pF 240 nC 85 nC 90 nC Inductive load, TJ = 25°°C 60 ns IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Ω 45 ns VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri 140 280 ns 180 280 ns Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 4.2 7.0 mJ td(on) Inductive load, TJ =125°°C 60 ns IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Ω 60 ns 4.8 mJ 190 ns 260 ns 6.7 mJ td(off) tfi tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline 0.26 K/W RthJC RthCK Terminals: 0.15 K/W Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1