CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT(RMS) = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings Features Thyristor for line frequencies International standard package JEDEC TO-208AA Planar glassivated chip Long-term stability of blocking currents and voltages ● ITSM I2t (di/dt)cr TVJ = TVJM Tcase = 85°C; 180° sine Tcase = 69°C; 180° sine 50 25 32 A A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 480 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 400 430 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1010 970 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 800 770 A2s A2s TVJ = TVJM repetitive, IT = 75 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = IT(AV)M diG/dt = 0.3 A/ms 150 A/ms 500 A/ms 1000 V/ms (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) PGM TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 300 ms PG(AV) 10 5 0.5 W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C Md Mounting torque Weight Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 2.7-3.3 24-29 12 ● ● ● Applications Motor control Power converter AC power controller ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling ● ● ● Dimensions in mm (1 mm = 0.0394") Nm lb.in. g 740 IT(RMS) IT(AV)M 1-3 CS 23 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM £ 3 VT IT £ 1.8 V VT0 rT For power-loss calculations only (TVJ = 125°C) 1.0 10 V mW VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL = 80 A; TVJ = 25°C mA TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C £ £ £ £ 2.5 3.5 50 80 V V mA mA VD = 2/3 VDRM £ £ 0.2 1 V mA TVJ = 25°C; tP = 10 ms IG = 0.15 A; diG/dt = 0.15 A/ms £ 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ £ 100 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.15 A; diG/dt = 0.15 A/ms £ 2 ms tq TVJ = TVJM; IT = 25 A, tP = 300 ms; di/dt = -20 A/ms VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM typ. 60 ms RthJC RthJH DC current DC current 1.0 K/W 1.61 K/W dS dA a Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 1.5 1.5 50 mm mm m/s2 Accessories: Nut M6 DIN 439/SW14 Lock washer A6 DIN 128 102 4 V ms C tgd IT 101 IGT: TVJ= -40°C IGT: TVJ= 0°C B lim. 100 B 2 typ. A TVJ= 125°C TVJ= 25°C B 3 IGT: TVJ= 25°C VG 120 80 60 lim. 100 40 1 typ. 20 A IGD: TVJ= 25°C IGD: TVJ=125°C 0 0 25 50 75 mA 100 IG Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe © 2000 IXYS All rights reserved 10-1 10-2 10-1 A 101 100 t Fig. 2 Gate controlled delay time tgd 0 0.0 0.5 1.0 1.5 2.0 V 2.5 VT Fig. 3 On-state characteristics 2-3 CS 23 1000 500 40 VR = 0 V 2 800 A s A 50Hz, 80%VRRM 400 ITSM A TVJ = 45°C 600 TVJ = 45°C TVJ = 125°C 30 IT(AV)M I2t TVJ = 125°C 400 300 20 200 200 10 100 0 10-3 0 100 10-2 10-1 100 s 101 1 2 3 5 6 7 ms 8 910 t 4 t Fig. 5 I2t versus time (1-10 ms) Fig. 4 Surge overload current ITSM: crest value, t: duration 0 50 100 °C 150 Tcase Fig. 6 Maximum forward current at case temperature 180° sine 80 W RthJA : 1.9 K/W 60 PT 2.3 K/W 2.7 K/W 40 2.7 K/W DC 180° sin 120° 60° 30° 20 4.3 K/W 6.1 K/W 0 0 10 20 30 40 50 A IT(AV)M 0 60 50 100 °C 150 Tamb Fig. 7 Power dissipation versus on-state current and ambient temperature RthJH for various conduction angles d: K/W d RthJH (K/W) DC 180° 120° 60° 30° 1.61 1.85 2.03 2.35 2.60 d = 30° d = 60° d = 120° 2 ZthJH d = 180° d = DC Constants for ZthJH calculation: i 1 0 10-3 1 2 3 4 5 6 10-2 10-1 100 101 102 103 s t Rthi (K/W) 0.224 0.132 0.321 0.522 0.249 0.162 ti (s) 0.003 0.028 0.216 1.1 4.2 43.2 104 Fig. 8 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 3-3