Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. VDSS = 500 V ID25 = 16 A RDS(on) = 0.5 Ω PDHS = 750 W Unless noted, specifications are for each output device Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 16 A IDM Tc = 25°C, pulse width limited by TJM 96 A IAR Tc = 25°C 16 A EAR Tc = 25°C 20 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 750 W 5.0 W 0.17 K/W -55…+150 °C TJM 150 °C Tstg -55…+150 °C 300 °C 4 g PDHS PDAMB (1) Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C RthJHS (1) TJ TL 1.6mm (0.063 in) from case for 10 s Weight Symbol Test Conditions DRAIN 2 GATE 2 GATE 1 SG1 SD1 SD2 SG2 Features IS = 0 (1) DRAIN 1 Characteristic Values VDSS VGS = 0 V, ID = 3 ma 500 VGS(th) VDS = VGS, ID = 4 ma 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test typ. • • − − • • • easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Package V 5.5 V ±100 nA • Optimized for RF and high speed switching at frequencies to >65MHz • Easy to mount—no insulators needed • High power density Note: All specifications are per each transistor, unless otherwise noted. (1) 0.5 6 Low gate charge and capacitances • High Performance Push-Pull RF max. 50 µA 1 mA 2 cycling capability IXYS advanced low Qg process Advantages TJ = 25°C unless otherwise specified min. • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power Ω S Thermal specifications are for the package, not per transistor Directed Energy, Inc. DE275X2-501N16A IXYS Company An Symbol Test Conditions RF Power MOSFET Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 0.3 Ω 1800 pF 150 pF Crss 45 pF Td(on) 3 ns 2 ns 4 ns 5 ns 50 nC 20 nC 30 nC RG Ciss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Coss Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgs Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V 16 A ISM Repetitive; pulse width limited by TJM 96 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 1.5 V Trr QRM IF = IS, -di/dt = 100A/µs, VR = 100V IRM (1) typ. max. 200 ns 0.8 µC 6.5 A These parameters apply to the package, not individual MOSFET devices. For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on DEI’s web site at www.directedenergy.com/apptech.htm Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 Directed Energy, Inc. An DE275X2-501N16A IXYS Company RF Power MOSFET 501N16A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Lg Doff D1crs Roff Rd D2crs 20 GATE 6 8 1 5 Don 2 M3 Dcos Rds 3 Ron 7 Ls 30 SOURCE Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: SYM=POWMOSN .SUBCKT 501N16A 10 20 30 * TERMINALS: D G S * 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET * REVA 6-15-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .2 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.0N RD 4 1 .5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M) .MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M) .ENDS Doc #9200-0245 Rev 1 © 2001 Directed Energy, Inc. Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.directedenergy.com