DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation Type Marking on product DGS 17-03CS 17A300AS DGSK 36-03CS DGSK 36-03CS Circuit Package A Single C A TO-252 AA TO-263 AB Common cathode A A A A C A Conditions Maximum Ratings VRRM/RSM 300 V 29 17.5 A A IFAV IFAV TC = 25°C; DC TC = 90°C; DC IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 20 A Ptot TC = 25°C 34 W Symbol Conditions Characteristic Values min. typ. max. VF IF = 7.5 A; IF = 7.5 A; TVJ = 25°C TVJ = 125°C 1.5 1.1 IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 125°C 0.25 0.25 mA mA 1.4 23 A ns 10.7 pF IF = 5 A; -diF/dt = 150 A/µs; VR = 150 V; TVJ = 125°C CJ VR = 150 V; TVJ = 125°C RthJC 1.9 V V 4.4 K/W Data according to IEC 60747 and per diode unless otherwise specified Component Conditions TVJ Tstg Symbol Weight Maximum Ratings -55...+175 -55...+150 Conditions Applications Switched Mode Power Supplies: • AC-DC converters • DC-DC converters with: • high switching frequency • high efficiency • low EMI for use e. g. in: • telecom • computer • automotive equipment °C °C Characteristic Values min. typ. max. TO-252 TO-263 IXYS reserves the right to change limits, Conditions and dimensions. © 2004 IXYS All rights reserved GaAs Schottky Diode with Enhanced Barrier Height: • lowest operating forward voltage drop due to additional injection of minority carriers • high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off Surface Mount Packages: • Incorporating Single and Dual Diode Topologies • Industry Standard Package Outlines • Epoxy meets UL 94V-0 0.3 2 g g 435 IRM t rr Symbol TAB A = Anode, TAB = Cathode Features Diode Symbol TAB 1-2 DGS 17-03CS DGSK 36-03CS 100 Outlines TO-252 AA 200 100 IF A 10 CJ pF 1 10 TVJ = 125°C 25°C 0.1 1 Anode 2 NC 3 Anode 4 Cathode Dim. TVJ = 125°C 0.01 0.0 0.5 1.0 1.5 VF 1 0.1 V 2.0 Fig. 1 typ. forward characteristics 1 10 100 V 1000 VR Fig. 2 typ. junction capacity versus blocking voltage 10 TO-252 K/W TO-263 1 ZthJC A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 Single Pulse 0.1 Outlines TO-263 AB 0.01 DGS17-03CS 0.00001 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 3 typ. thermal impedance junction to case 1. 2. 3. 4. © 2004 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC .380 .405 .245 .320 .100 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 R 0.46 0.74 .018 .029 435 IXYS reserves the right to change limits, Conditions and dimensions. Gate Collector Emitter Collector 2-2