DSEC 60-03A DSEC 60-03AR HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 300 300 ISOPLUS 247TM TO-247 AD Type Version A DSEC 60-03A DSEC 60-03AR A C A Version AR A C A A C A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM TC = 145°C; rectangular, d = 0.5 IFSM EAS 70 30 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C 165 W TVJ TVJM Tstg Features ● ● ● ● ● ● ● Ptot TC = 25°C Md * FC mounting torque mounting force with clip VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab Weight typical 0.8...1.2 10...50 Nm N 2500 6 V~ g * Verson A only; ** Version AR only ● ● ● Conditions Characteristic Values typ. max. ● ● IR ① VF ② TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 250 1 mA mA IF = 30 A; 0.91 1.25 V V 0.9 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100°C 30 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % ● ● ● ● A Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ns 7 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Version AR isolated and UL registered E153432 Applications ● Symbol * Patent pending Maximum Ratings ● IAR Isolated back surface * C (TAB) ● Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 025 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEC 60-03A DSEC 60-03AR 60 800 30 TVJ = 100°C nC A VR = 150V 40 VR = 150V 25 600 IF TVJ = 100°C A IRM Qr 20 IF = 60A TVJ=150°C IF = 60A IF = 30A IF = 30A 400 TVJ=100°C IF = 15A 15 IF = 15A TVJ= 25°C 20 10 200 5 0 0.0 0.5 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 90 trr 0 200 ms 1000 600 A/ 800 -diF/dt 400 Fig. 3 Peak reverse current IRM versus -diF/dt 14 TVJ = 100°C ns 1.2 0 A/ms 1000 -diF/dt TVJ = 100°C V VR = 150V 80 IF = 30A VFR Kf 0.8 70 IRM 60 0.6 0.6 IF = 30A IF = 15A Qr 0.4 10 50 0.4 0.2 40 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 8 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ tfr VFR IF = 60A 0.8 µs 1.0 tfr 12 1.0 1.2 Fig. 5 Recovery time trr versus -diF/dt 1 0.0 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04 0.01 0.001 0.0001 0.00001 DSEP30-03A/DSEC 60-03A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 025 Fig. 7 Transient thermal resistance junction to case 2-2