DSEI 2x 121 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 200 200 IFAVM = 2x 123 A VRRM = 200 V trr = 35 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 121-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM IFSM TVJ = 45°C; 150 123 600 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1080 1170 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7100 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5800 5700 A2s A2s -40...+150 150 -40...+150 °C °C °C 250 W 2500 V~ Features ● ● ● ● ● I2t TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13 Weight 30 ● ● ● International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour miniBLOC, SOT-227 B Nm/lb.in. Nm/lb.in. g M4 screws (4x) supplied Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM IF = 120 A; TVJ = 150°C TVJ = 25°C VF VT0 rT Characteristic Values (per diode) typ. max. 0.89 For power-loss calculations only TVJ = TVJM RthJC RthCK 1 0.5 20 mA mA mA 0.95 1.10 V V 0.7 2.1 V mW 0.5 K/W K/W 0.1 Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 IF = 1 A; -di/dt = 400 A/ms; VR = 30 V; TVJ = 25°C 35 50 ns P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 IRM VR = 100 V; IF = 100 A; -diF/dt = 200 A/ms L £ 0.05 mH; TVJ = 100°C 12 15 A R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 009 trr 1-2 DSEI 2x 121, 200V IF 200 A 175 2.0 150 Qr 1.5 60 A TVJ= 100°C VR = 100V µC TVJ= 100°C VR = 100V 50 IRM IF=240A IF=120A IF= 60A 40 125 100 IF=240A IF=120A IF= 60A 1.0 TVJ=150°C 75 30 20 TVJ=100°C 50 0.5 TVJ=25°C 10 25 0 0.0 0.5 1.0 V VF 0.0 10 1.5 Fig. 1 Forward current IF versus VF 100 Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 2.0 150 0 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt 12 TVJ= 100°C VR = 100V ns 0 A/ms 1000 -diF/dt 10 1.5 Kf IF=240A IF=120A IF= 60A IRM 1.0 100 0.5 75 0.0 50 0 50 100 °C 150 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 8 600 800 A/ms -diF/dt tfr 2.0 6 1.5 4 1.0 2 0.5 0 0 0.0 100 200 300 400 500 A/ms diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt Constants for ZthJC calculation: i D=0.5 ZthJC µs 2.5 tfr 1 K/W 0.1 VFR VFR trr 125 Qr 3.0 TVJ= 100°C IF = 120A V 1 2 3 0.2 0.1 Rthi (K/W) ti (s) 0.0725 0.1423 0.2852 0.028 0.092 0.35 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles © 2000 IXYS All rights reserved 2-2