DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 9 A VRRM = 600 V trr = 15 ns with soft recovery (Electrically Isolated Back Surface) VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 9-06CR A = Anode, C = Cathode * Patent pending Maximum Ratings Features Symbol Conditions IFRMS IFAVM IFRM TC = 140°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 50 9 tbd A A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH 0.5 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A -55...+175 175 -55...+150 °C °C °C 150 W 2500 V~ 20...120 N Applications 6 g • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC mounting force with clip Weight typical Symbol Conditions IR ① VF ② Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 50 0.2 µA mA IF = 9 A; 2.9 4.0 V V 1 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 15 IRM VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs TVJ = 100°C 3.5 ns 4.1 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % A • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low cathode to tab capacitance (< 25 pF) • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Isolated and UL registered E153432 Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-2 DSEP 9-06CR 30 0.4 A TVJ = 100°C µC V = 300 V R 25 IF 20 0.3 IRM Qr 20 TVJ = 150°C TVJ = 100°C TVJ = 25°C 15 10 IF = 20 A IF = 10 A IF = 5 A 0.2 TVJ = 100°C VR = 300 V A 15 IF = 20 A IF = 10 A IF = 5 A 10 0.1 5 5 0 0 1 2 3 0.0 100 4 V 5 0 A/µs 1000 -diF/dt VF Fig. 1 Max. forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 45 1.4 1.2 ns IRM 0.6 QR 400 600 A/µs 800 1000 -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt 1.6 TVJ = 100°C IF = 10 A V VFR 60 IF = 20 A IF = 10 A IF = 5 A 40 Kf 0.8 200 80 TVJ = 100°C VR = 300 V trr 1.0 0 µs 1.2 tfr 40 0.8 20 0.4 35 0.4 0.2 0.0 30 0 40 80 120 °C 160 0 TVJ 200 400 600 800 1000 A/µs -diF/dt Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ trr 0 0 VFR 200 400 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 10 K/W 1 ZthJC 0.1 0.01 0.0001 DSEP 9-06CR 0.001 0.01 0.1 s 1 10 t 406 Fig. 7 Transient thermal resistance junction to case © 2004 IXYS All rights reserved 2-2