DSI 45 VRRM = 800-1600 V IF(AV)M = 48 A Rectifier Diode VRSM V 900 1300 1700 VRRM Type A C TO-247 AD ISOPLUS 247TM Version A Version AR V 800 1200 1600 DSI 45-08A DSI 45-12A DSI 45-16A C C A A C (TAB) DSI 45-16AR TAB A = Anode, C = Cathode Features ● ● Symbol Test Conditions IF(AV)M TC IFSM TVJ = 45°C; VR = 0 V; Maximum Ratings = 105°C; 180° sine 48 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 475 520 A A TVJ = 150°C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 380 420 A A TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1120 1120 A2s A2s TVJ = 150°C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 720 720 A2s A2s ● ● -40...+150 150 -40...+150 TVJ TVJM Tstg Md * mounting torque VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab Weight typical °C °C °C 0.8...1.2 Nm 2500 V~ 6 Version AR isolated and UL registered E153432 Epoxy meets UL 94V-0 Applications ● ● ● I2t International standard package Planar glassivated chips ● Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages ● ● ● ● Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") g * Verson A only; ** Version AR only Symbol Test Conditions IR TVJ = TVJM; VR = VRRM £ 3 VF IF £ 1.18 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 8 V mW RthJC RthCH DC current typical 0.55 0.2 K/W K/W Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved mA Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D* 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 * ISOPLUS 247 TM without hole 028 = 40 A; TVJ = 25°C Characteristic Values 1-2 DSI 45 70 500 A 104 50Hz, 80% VRRM 2 As A 60 400 IFSM TVJ=150°C TVJ= 25°C IF 50 VR = 0 V I2t TVJ = 45°C 300 40 TVJ = 45°C 103 30 200 20 TVJ = 150°C TVJ = 150°C 100 10 0 0.0 0.4 1.2 V 0.8 102 0 0.001 1.6 0.01 0.1 VF s 1 1 2 3 t Fig. 1 Forward current versus voltage drop per diode 4 5 6 78 ms910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 100 50 RthHA : W A 0.5 K/W 1.0 K/W 1.5K/W 2.0 K/W 3.0 K/W 4.0 K/W 6.0 K/W 80 Ptot 60 40 IF(AV)M 30 40 20 20 10 0 0 0 10 20 30 40 A 0 20 40 60 80 100 120 140 °C Id(AV)M Fig. 4 0 Tamb Power dissipation versus direct output current and ambient temperature, sine 180° 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current versus case temperature 0.6 K/W ZthJC 0.4 Constants for ZthJC calculation: 0.2 0.0 0.001 DSI45 0.01 0.1 Fig. 6 Transient thermal impedance junction to case © 2000 IXYS All rights reserved s 1 i Rthi (K/W) ti (s) 1 2 3 4 0.1633 0.2517 0.0933 0.04167 0.016 0.118 0.588 2.6 10 t 2-2