DSS 16-0045B IFAV = 16 A VRRM = 45 V VF = 0.42 V Power Schottky Rectifier VRSM VRRM V V 45 45 TO-220 AC Type A C C A DSS 16-0045B C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 130°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR 35 16 A A 320 A IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive 32 mJ VA =1.5 • VRRM typ.; f=10 kHz; repetitive 1.5 A (dv/dt)cr 1000 TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR VF V/ms -55...+150 150 -55...+150 °C °C °C 90 W 0.4...0.6 2 Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM 10 100 mA mA IF = 15 A; IF = 15 A; IF = 30 A; 0.42 0.48 0.62 V V V 1.4 K/W K/W TVJ = 125°C TVJ = 25°C TVJ = 125 °C RthJC RthCH 0.5 Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see outlines.pdf IXYS reserves the right to change limits, Conditions and dimensions. © 2000 IXYS All rights reserved 007 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSS 16-0045B 100 10000 1000 mA TVJ=150°C A IR IF 100 pF CT 125°C 10 100°C 10 1000 75°C 1 50°C TVJ = 150°C 125°C 25°C 0.1 25°C TVJ= 25°C 1 0.0 100 0.01 0.2 0.6 V 0.4 0 10 20 30 Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 25 40 A 35 0 40 V 50 VR VF 10 20 30 VR 40 V Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 10000 W 20 A IFSM P(AV) 30 IF(AV) 25 d=0.5 DC 15 d= DC 0.5 0.33 0.25 0.17 0.08 20 10 15 10 5 1000 5 0 0 0 40 80 120 °C 160 0 TC Fig. 4 Average forward current IF(AV) versus case temperature TC 5 10 15 20 25 IF(AV) 30 A 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics 2 1 D=0.5 K/W ZthJC 0.33 0.25 0.17 Single Pulse 0.08 0.1 0.01 0.0001 DSS 16-0045B 0.001 0.01 0.1 s 1 10 t Note: All curves are per diode 848 Fig. 6 Transient thermal impedance junction to case at various duty cycles © 2000 IXYS All rights reserved 2-2