IXYS DSSK16-01AS

DSSK 16-01A
DSSK 16-01AS
IFAV = 2x8 A
VRRM = 100 V
VF
= 0.63 V
Power Schottky Rectifier
with common cathode
VRSM
V
100
100
VRRM
TO-220 AB
(A-Type)
Type
V
100
100
A
DSSK 16-01A
DSSK 16-01AS
C
A
C
A
A
TO-263 AB
(AS-Type)
C (TAB)
A
C (TAB)
A
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAV
IFAV
TC = 165°C; rectangular, d = 0.5
TC = 165°C; rectangular, d = 0.5; per device
IFSM
35
8
16
A
A
A
TVJ = 45°C; tp = 10 ms (50 Hz), sine
120
A
EAS
IAS = 5 A; L = 100 µH; TVJ = 25°C; non repetitive
1.3
mJ
IAR
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
0.8
A
5000
V/µs
-55...+175
175
-55...+150
°C
°C
°C
90
W
0.4...0.6
Nm
2
g
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque (Version A only)
Weight
typical
Features
•
•
•
•
•
International standard package
Very low VF
Extremely low switching losses
Low IRM-values
Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see Outlines.pdf
Symbol
Conditions
Characteristic Values
typ.
max.
IR
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 125°C
VF
IF = 8 A;
IF = 8 A;
IF = 16 A;
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
RthJC
RthCH(Version A only)
0.5
0.3
2.5
mA
mA
0.63
0.81
0.75
V
V
V
1.7
K/W
K/W
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
515
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
1-2
DSSK 16-01A
DSSK 16-01AS
20
10
A
mA T =175°C
VJ
10
pF
1
IR
IF
1000
CT
150°C
125°C
0.1
100°C
TVJ =
175°C
150°C
125°C
25°C
0.01
75°C
50°C
0.001
1
0.0
100
25°C
0.2
0.4
0.6
0.8 V 1.0
0
20
40
60
40
A
35
60
80 V 100
VR
A
IFSM
25
d=0.5
DC
20
d=
DC
0.5
0.33
0.25
0.17
0.08
20
15
15
10
10
5
5
0
0
0
40
80
120
TC
160C
Fig. 4 Avg. forward current IF(AV)
vs. case temperature TC
ZthJC
40
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. reverse current IR
versus reverse voltage
P(AV)
25
K/W
20
35
W
30
30
IF(AV)
1
0
80 V 100
VR
VF
Fig. 1 Max. forward voltage
drop characteristics
TVJ= 25°C
10
0.0001
0
5
10
15
20 25
IF(AV)
30
A
µs
tP
Fig. 5 Forward power loss characteristics
D=0.5
0.33
0.25
0.17
0.08
0.1
Single Pulse
(Thermal Resistance)
DSSK 16-01A
0.01
0.0001
0.001
0.01
0.1
1
s
Note: All curves are per Diode
10
t
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
515
Fig. 6 Transient thermal impedance junction to case at various duty cycles
2-2