Advanced Technical Information Bidirectional Switch with IGBT and fast Diode Bridge FIO 50-12BD IC25 VCES VCE(sat) typ. = 50 A = 1200 V = 2.0 V in ISOPLUS i4-PACTM 1 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon 1200 V ± 20 V 50 32 A A 50 VCES A 10 µs 200 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 2.6 6.5 V 0.4 mA mA 200 nA 0.4 VCE = 0 V; VGE = ± 20 V V V Inductive load, TVJ = 125°C VCE = 600 V; IC = 30 A VGE = ±15 V; RG = 39 Ω 150 60 700 50 3.6 3.0 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 30 A 2 250 nF nC 1.2 0.6 K/W K/W Applications switches to control bidirectional current flow by a single control signal: • matrix converters • spare matrix converters • AC controllers 145 RthJC RthJS • IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline © 2001 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 FIO 50-12BD Diodes Dimensions in mm (1 mm = 0.0394") Symbol Conditions Maximum Ratings IF25 IF90 TC = 25°C TC = 90°C 48 25 Symbol Conditions Characteristic Values min. typ. max. VF IF = 30 A; TVJ = 25°C TVJ = 125°C IRM t rr IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V RthJC RthJS (per diode) 2.4 1.8 A A 2.8 V V 27 150 A ns 2.6 1.3 K/W K/W Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case dS,dA dS,dA pin - pin pin - backside metal Weight © 2001 IXYS All rights reserved -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 40 1.7 5.5 pF mm mm 9 g 2-2