Advanced Technical Information FII 30-12D IC25 Fast IGBT Chopper VCES VCE(sat) typ. in ISOPLUS i4-PACTM = 30 A = 1200 V = 2.3 V 1 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C td(on) tr td(off) tf Eon Eoff Cies QGon V ± 20 V 30 18 A A 35 VCES A 10 µs 125 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IGES 1200 2.3 2.6 4.5 3.0 V V 6.5 V 0.9 mA mA 200 nA 0.9 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 82 Ω 100 75 500 70 3.0 2.4 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 18 A 1000 70 pF nC Applications • single phaseleg - buck-boost chopper • H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • three phase bridge - AC drives - controlled rectifier 1.0 K/W 039 RthJC • NPT IGBT - low saturation voltage - no latch up - positive temperature coefficient for easy paralleling • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline © 2000 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 FII 30-12D Diodes Dimensions in mm (1 mm = 0.0394") Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF90 Maximum Ratings 1200 V TC = 25°C TC = 90°C 25 15 A A Symbol Conditions Characteristic Values min. typ. max. VF IF = 20 A; TVJ = 25°C TVJ = 125°C IRM t rr IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V RthJC (per diode) 2.3 K/W Conditions Maximum Ratings 2.5 1.9 16 130 2.9 V V A ns Component Symbol TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA pin - pin pin - backside metal RthCH with heatsink compound Weight © 2000 IXYS All rights reserved -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 1.7 5.5 mm mm 0.15 K/W 9 g 2-2