IRFP 450 Standard Power MOSFET VDSS = 500 V ID(cont) = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 14 A IDM TC = 25°C, pulse width limited by TJM 56 A 14 A IAR EAR TC = 25°C 19 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 3.5 V/ns PD TC = 25°C 190 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C TO-247 AD D (TAB) G = Gate, S = Source, Features l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) V 4 V ±100 nA TJ = 25°C TJ = 125°C 25 250 µA µA VGS = 10 V, ID = 8.4 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.40 Ω IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved D = Drain, TAB = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 92604E(5/96) 1-2 IRFP 450 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 8.4 A, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss t d(on) 9.3 S 2800 pF 300 pF 150 pF 18 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 14 A 47 ns td(off) RG = 6.2 Ω, (External) 92 ns 44 ns tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 14 A Q gd 110 150 nC 15 20 nC 50 80 nC R thJC 0.65 R thCK 0.24 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 14 A ISM Repetitive; pulse width limited by TJM 56 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.4 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V © 2000 IXYS All rights reserved TO-247 AD Outline 500 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2