MegaMOSTM Power MOSFET IRFP 460 VDSS ID(cont) RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 20 A IDM TC = 25°C, pulse width limited by TJM 80 A 20 A IAR EAR TC = 25°C 28 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 3.5 V/ns PD TC = 25°C 260 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ Md Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s D = Drain, TAB = Drain l l l l l Repetitive avalanche energy rated Fast switching times Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High Commutating dv/dt Rating 6 g 300 °C Applications l Switching Power Supplies l Motor controls Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 12 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved G = Gate, S = Source, 1.15/10 Nm/lb.in. Weight Test Conditions D (TAB) Features Mounting torque Symbol TO-247 AD 0.25 4 V ±100 nA 25 250 µA µA 0.27 Ω 92825D (5/98) 1-4 IRFP 460 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 12 A, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss t d(on) 13 21 S 4200 pF 450 pF 135 pF 23 35 ns tr VGS = 10 V, VDS = 250 V, ID = 20 A 81 120 ns td(off) RG = 4.3 Ω, (External) 85 130 ns 65 98 ns 135 210 nC 28 40 nC 62 110 nC 0.45 K/W tf Q g(on) Q gs VGS = 10 V, VDS = 200 V, ID = 20 A Q gd R thJC R thCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive; pulse width limited by TJM 80 A VSD IF = 20 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.8 V t rr Q rr IF = 20 A, -di/dt = 100 A/µs, VR = 100 V 860 ns µC © 2000 IXYS All rights reserved 570 5.7 TO-247 AD Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IRFP 460 50 VGS=10V 9V 8V 7V TJ = 25OC 6V ID - Amperes ID - Amperes 40 TJ = 125OC 30 30 20 5V VGS=10V 9V 8V 7V 6V 20 5V 10 10 0 0 4 8 12 16 0 20 0 4 8 VDS - Volts 20 Figure 2. Output Characteristics at 125OC 2.8 6 VGS = 10V VGS = 10V RDS(ON) - Normalized 2.4 RDS(ON) - Normalized 16 VDS - Volts Figure 1. Output Characteristics at 25OC Tj=1250 C 2.0 1.6 Tj=250 C 1.2 0.8 0 10 20 30 40 5 ID = 24A 4 3 ID = 12A 2 1 25 50 50 ID - Amperes 75 100 125 150 TJ - Degrees C Figure 3. RDS(on) normalized to value at ID = 12A Figure 4. RDS(on) normalized to value at ID = 12A 25 24 20 20 ID - Amperes ID - Amperes 12 15 10 16 12 TJ = 125oC 8 TJ = 25oC 5 4 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 0 0 2 4 6 8 VGS - Volts Figure 6. Admittance Curves 3-4 IRFP 460 12 5000 Ciss VDS = 400V ID = 15A 2500 Capacitance - pF VGS - Volts 10 8 6 4 f = 1MHz Coss 1000 500 Crss 250 2 0 100 0 50 100 150 200 0 5 10 Gate Charge - nC 15 20 25 VDS - Volts Figure 8. Capacitance Curves Figure 7. Gate Charge 50 100 40 ID - Amperes ID - Amperes 0.1ms 30 TJ = 125OC 20 TJ = 25OC 10 1ms 10ms 1 TC = 25OC 100ms DC 10 0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 10 VSD - Volts 100 500 VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area R(th)JC - K/W 1 Single pulse 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4