HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 44N60 VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S trr ≤ 250 ns S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 41 A IDM TC = 25°C, pulse width limited by TJM 176 A IAR TC = 25°C 44 A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C - °C 2500 3000 V~ V~ TJ 1.6 mm (0.63 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md 600 V 41 A Ω 130 mΩ G Preliminary data sheet TJ TJM Tstg = = = t = 1 min t=1s Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 Weight ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier g Applications • DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = 3 mA 600 VGH(th) V DS = VGS, ID = 8 mA 2.5 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) V GS = 10 V, ID = IT Note1 © 2002 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.5 V ±200 nA 100 µA 2 mA 130 mΩ • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Low cost • Easy to mount • Space savings • High power density 98894 (1/02) IXFE 44N60 Symbol Test Conditions gfs VDS = 10 V; ID = IT, Note:1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 Ciss 45 S 8900 pF 1000 pF Crss 330 pF td(on) 42 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd 55 ns 110 ns 45 ns 330 nC 60 nC 65 nC 0.25 RthJC RthCK 0.07 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM ISOPLUS-227 B K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 A Repetitive; pulse width limited by TJM 176 A VSD IF = IS, VGS = 0 V, Note:1 1.3 V t rr QRM IRM IF = 50A, -di/dt = 100 A/µs, VR = 100 V 250 ns µC A 1.4 8 Please see IXFN44N60 data sheet for characteristic curves. Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. Test current IT = 22A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1