HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS(on) S2 QEaF = 100 V = 100 A Ω = 15 mΩ S3 QEaF PEhF NEdF QEaF NEdF NEdF OEpF Diode HiPerFET MOSFET OIPEpF Symbol Test Conditions Maximum Ratings VDSS qg=Z=OR°`=íç=NRM°` NMM s VDGR qg=Z=OR°`=íç=NRM°`X=odp=Z=N=jΩ NMM s `çåíáåìçìë ±OM s VGSM qê~åëáÉåí ±PM s ID25 q`=Z=OR°` NMM ^ IDM q`=Z=OR°`I éìäëÉ=ïáÇíÜ=äáãáíÉÇ=Äó=ã~ñK=qgj QMM ^ IAR q`=Z=OR°` NMM ^ EAR oÉéÉíáíáîÉ QR ãg dv/dt fp=≤=fajI=JÇáLÇí=≤=NMM=^LµëI=saa=≤=sappI qg=≤=NRM°`I=od=Z=O=Ω R sLåë PD q`=Z=OR°` PSM t VRRM NMM s IRMS NMM ^ ================SM ^ ====================TMM ====^ N sLåë NRM t JQM=KKK=HNRM °` TJM NRM °` Tstg JQM=KKK=HNRM °` ORMM PMMM sú sú q`=Z=NMR°`X=êÉÅí~åÖìä~êI=Ç=Z=MKR IFRM ím=YNM=µëX=éìäëÉ=ïáÇíÜ=äáãáíÉÇ=Äó=qJ (dv/dt)CR PD q`=Z=OR°` Case TJ VISOL RMLSM= eòI= ojp ffpli=≤=N=ã^ í=Z=N=ë Md jçìåíáåÖ=íçêèìÉ qÉêãáå~ä=ÅçååÉÅíáçå=íçêèìÉ=EjQF Weight «=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ í=Z=N=ãáå NKRLNP kãLäÄKáåK NKRLNP kãLäÄKáåK PM OEpF miniBLOC, SOT-227 B E153432 p d VGS IFAVM PE^F Ö ^Lh a p=Z=pçìêÅÉ d=Z=d~íÉ a=Z=aê~áå ^= Z= ^åçÇÉ h=Z=`~íÜçÇÉ Features 8 mçéìä~ê=_ìÅâ=C=_ççëí=ÅáêÅìáí íçéçäçÖáÉë 8 içï=sc=pÅÜçííâó=ÇáçÇÉ=ïáíÜ=îÉêó=ëã~ää ëïáíÅÜáåÖ=äçëëÉë 8 fåíÉêå~íáçå~ä=ëí~åÇ~êÇ=é~Åâ~ÖÉ ãáåá_il`= plqJOOT_ 8 ^äìãáåáìã=åáíêáÇÉ=áëçä~íáçå J ÜáÖÜ=éçïÉê=Çáëëáé~íáçå 8 fëçä~íáçå=îçäí~ÖÉ=PMMM=sú 8 içï=oap=EçåF=eajlpqj=éêçÅÉëë 8 oìÖÖÉÇ=éçäóëáäáÅçå=Ö~íÉ=ÅÉää=ëíêìÅíìêÉ 8 içï=Çê~áåJíçJÅ~ëÉ=Å~é~Åáí~åÅÉ EYSM= écF J êÉÇìÅÉÇ=ocf Applications 8 pjmpI=éçïÉê=Ñ~Åíçê=Åçåíêçäë=~åÇ ÄìÅâ=êÉÖìä~íçêë 8 a`=ëÉêîç=~åÇ=êçÄçíáÅ=ÇêáîÉë 8 a`= ÅÜçééÉêë 8 pïáíÅÜ=êÉäìÅí~åÅÉ=ãçíçê=Åçåíêçäë Advantages 8 b~ëó=íç=ãçìåí=ïáíÜ=O=ëÅêÉïë 8 pé~ÅÉ=ë~îáåÖë 8 qáÖÜíäó=ÅçìéäÉÇ=pÅÜçííâó=ÇáçÇÉ VUSQM^= ENOLMMF IXFN 100N10S1 Symbol Test Conditions VDSS s dp Z=M=sX=fa=Z=P=ã^ s dp Z=M=sX=fa=Z=ORM=µ^ VGS(th) s ap Z=sdpX=fa=Z=Q=ã^ IGSS s dp Z=±OM=sa`X=sap=Z=M IDSS s ap Z=sappX=sdp=Z=M=s Characteristic Values Eqg=Z=OR°`X=ìåäÉëë=çíÜÉêïáëÉ=ëéÉÅáÑáÉÇF min. typ. max. pN NMM pOLpP NMM miniBLOC, SOT-227 B s s O pN pOLpP pN pOLpP =qg==== =Z=NOR°` Q s ±NMM å^ O OR OM N ã^ µΑ ã^ ã^ jQ=ëÅêÉïë=EQñF=ëìééäáÉÇ aáãK RDS(on) s dp Z=NM=sX=fa=Z=MKR==faORX=kçíÉ=N gfs s ap Z=NM=sX=fa=Z=MKR=faORX=éìäëÉ=íÉëí Ciss sdp==Z=M=sX=sap=Z=OR=sX=Ñ=Z=N=jeò NR ãΩ PNKUU UKOM NKOQM MKPMT NKORR MKPOP ` a QKMV QKMV QKOV QKOV MKNSN MKNSN MKNSV MKNSV b c QKMV NQKVN QKOV NRKNN MKNSN MKRUT MKNSV MKRVR éc d e PMKNO PUKMM PMKPM PUKOP NKNUS NKQVS NKNVP NKRMR éc g h NNKSU UKVO NOKOO VKSM MKQSM MKPRN MKQUN MKPTU åë i j MKTS NOKSM MKUQ NOKUR MKMPM MKQVS MKMPP MKRMS TM åë k l ORKNR NKVU ORKQO OKNP MKVVM MKMTU NKMMN MKMUQ NMM åë m n QKVR OSKRQ RKVT OSKVM MKNVR NKMQR MKOPR NKMRV PM åë o p PKVQ QKTO QKQO QKUR MKNRR MKNUS MKNTQ MKNVN q r OQKRV JMKMR ORKMT MKN MKVSU JMKMMO MKVUT MKMMQ QRMM éc pN NVMM éc pOLpP NSMM Crss UTM td(on) PM s dp Z=NM=sX=sap=Z=MKR=sappX=fa=Z=MKR=faOR td(off) od Z=NKR Ω=EbñíÉêå~äF tf NUM å` Qgs PS å` Qgd VR å` Qg(on) s dp Z=NM=sX=sap=Z=MKR==sappX=fa=Z=MKR==faOR VSD fc=Z=NMM^X=sdp=Z=M=sX=kçíÉ=N=EpOI=pPF NKR s trr fc=Z=OR=^XJÇáLÇí=Z=NMM=^LµëX=so=Z=OR=s OMM åë MKPR RthJC MKMR RthCK Schottky Diode Symbol IR VF µ` ^ MKU S QRM IRM Test Conditions =hLt hLt Characteristic Values Eqg=Z=OR°`I=ìåäÉëë=çíÜÉêïáëÉ=ëéÉÅáÑáÉÇF min. typ. max. so= Z=sooj ==O ã^ qg= Z=NOR°`X=so= Z=sooj OM ã^ MKUS MKTP MKVP s s s fc=Z=SM=^X sdp=Z=M=sX=kçíÉ=N fc=Z=SM=^X sdp=Z=M=s fc=Z=NOM=^ fåÅÜÉë jáåK j~ñK PNKRM TKUM p tr jáääáãÉíÉê jáåK j~ñK ^ _ QR Coss PM IXFN 100N10S2 IXFN 100N10S3 qg= Z= NOR°` qg= Z= NOR°` =MKU hLt RthJC RthJK MKN hLt IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR