HiPerFETTM Power MOSFETs VDSS ID25 IXFT 10 N100 1000 V 10 IXFT12 N100 1000 V 12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family RDS(on) A A 1.20 Ω 1.05 Ω trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 1000 1000 V V ±20 ±30 V V 10N100 12N100 10N100 12N100 10N100 12N100 10 12 40 48 10 12 A A A A A A 30 mJ 5 V/ns 300 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque TO-268 Case Style G G = Gate, S = Source, TO-268 = 6 g TAB = Drain Features z z z z z 1.13/10 Nm/lb.in. Weight (TAB) S z International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 z z V z 4.5 V z ±100 nA 250 1 µA mA 1.20 1.05 Ω Ω z TJ = 25°C TJ = 125°C 10N100 12N100 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved z z DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages z z z Surface mountable, high power package Space savings High power density DS98509A(01/04) IXFT 10N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 6 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 10 S 4000 pF 310 pF Crss 70 pF td(on) 21 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 50 ns td(off) RG = 2 Ω (External), 62 100 ns 32 50 ns 122 155 nC 30 45 nC 50 80 nC 0.42 K/W tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC Source-Drain Diode Test Conditions IS VGS = 0 V 10N100 12N100 10 12 A A ISM Repetitive; pulse width limited by TJM 10N100 12N100 40 48 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 400 ns ns QRM IF = IS -di/dt = 100 A/µs, VR = 100 V IRM TO-268 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol trr IXFT 12N100 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 1 2 µC µC TJ = 25°C TJ = 125°C 10 15 A A Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFT 10N100 Fig. 1. Output Characteristics 20 Fig. 2. Input Admittance TJ = 25°C 18 20 VGS = 10V 18 7V 16 6V 14 ID - Amperes ID - Amperes 16 12 10 8 6 5V 14 12 8 6 4 2 2 0 0 5 10 15 20 TJ = 25°C 10 4 0 0 1 2 3 VDS - Volts 1.5 2.50 TJ = 25°C RDS(on) - Normalized RDS(on) - Normalized 1.2 VGS = 10V VGS = 15V 1.1 1.0 6 7 8 9 10 Fig. 4. Temperature Dependence of Drain to Source Resistance 2.00 1.75 1.50 ID = 6A 1.25 1.00 0.75 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 50 75 1.2 18 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 16 14 12N100 12 10 10N100 8 100 125 150 Fig. 6. Temperature Dependence of Breakdown and Threshold Voltage 20 6 4 1.0 0.9 0.8 0.7 0.6 2 0 -50 25 TJ - Degrees C Fig. 5. Drain vs. Case Temperature ID - Amperes 5 2.25 1.3 0.9 4 VGS - Volts Fig. 3. RDS(on) vs. Drain Current 1.4 IXFT 12N100 -25 0 25 50 75 TC - Degrees C © 2004 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXFT 10N100 IXFT 12N100 Fig. 7. Gate Charge Characteristic Curve 10 8 10 Limited by RDS(on) ID - Amperes 7 VGS - Volts 10µs VDS = 500V ID = 6A IG = 10mA 9 6 5 4 3 100µs 1ms 1 10ms 100ms 2 1 0 0 25 50 75 100 125 0.1 150 1 10 Gate Charge - nCoulombs 16 3500 3000 f = 1MHz VDS = 25V 2500 2000 1500 1000 5 12 10 TJ = 125°C 8 6 TJ = 25°C 2 Crss 0 14 4 Coss 500 0 Fig. 9. Source Current vs. Source to Drain Voltage 18 ID - Amperes Capacitance - pF 20 Ciss 4000 1000 VDS - Volts Fig. 8. Capacitance Curves 4500 100 10 15 0 0.0 20 0.2 VDS - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.10. Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505