Advanced Technical Information IXFH 75N10Q IXFT 75N10Q HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 TC = 25°C 75 A IDM TC = 25°C, pulse width limited by TJM 300 A I AR TC = 25°C 75 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.5 J dv/dt I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, Maximum Ratings 5 V/ns TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 AD TO-268 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 6 4 g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 4 mA 2.0 I GSS VGS = ±20 VDC, VDS = 0 I DSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 1999 IXYS All rights reserved 300 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) = 100 V = 75 A = 20 mW V 4 V ±100 nA 25 1 µA mA 20 mΩ G = Gate S = Source (TAB) S D = Drain TAB = Drain Features l l l l l l IXYS advanced low gate charge process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l Easy to mount Space savings High power density 98550A (6/99) IXFH 75N10Q IXFT 75N10Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 30 45 S 3700 pF 1300 pF Crss 425 pF td(on) 31 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 65 ns td(off) RG = 4.7 Ω (External) 65 ns 28 ns tf Qg(on) Qgs 140 180 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 30 nC 65 nC RthJC RthCK 0.42 (TO-247) Source-Drain Diode K/W 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; VSD I F = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM nC I F = 50A,-di/dt = 100 A/µs, VR = 50 V 75 A 300 A 1.5 V 200 ns µC A 0.85 8 TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025