Preliminary data TM HiP erF AST HiPerF erFAST with Diode IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S IGBT Combi P ac k Pac ack VCES IC(25) VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 500 500 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1 ms 44 22 88 A A A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH ICM = 44 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight 1.13/10 Nm/lb.in. TO-247 SMD TO-247 AD Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 1997 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250µA, VGE = 0 V = 250 µA, VCE = VGE = IC90, VGE = 15 V 4 6 500 2.5 TJ = 25°C TJ = 125°C 2.1 5.5 V V 200 8 µA mA ±100 nA 2.5 V C (TAB) G E TO-247 AD C (TAB) G C G = Gate, E = Emitter, E C = Collector, TAB = Collector *Add suffix letter "S" for surface mountable package Features • International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • Space savings (two devices in one package) • High power density • Suitable for surface mounting • Very low switching losses for high frequency applications • Easy to mount with 1 screw,TO-247 (insulated mounting screw hole) 97509(2/97) IXGH22N50B U1 IXGH22N50BU1 Symbol Test Conditions gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) tri Eon td(off) tfi Eoff TO-247 AD Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes Cres td(on) tri Eon td(off) tfi Eoff IXGH22N50B U1S IXGH22N50BU1S 9 Inductive load, TJ = 25 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω Note 1 Inductive load, TJ = 125 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 10 Ω Note 1 RthJC RthCK 16 S ∅P 1450 120 37 pF pF pF 90 11 30 nC nC nC 15 30 0.15 100 55 0.3 ns ns mJ ns ns mJ 150 110 0.5 15 30 0.15 140 100 0.6 ns ns mJ ns ns mJ 0.25 0.83 K/W K/W e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IRM trr IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs VR = 360 V TJ =125°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 10 150 35 1.6 V 15 A ns ns 50 RthJC 1 K/W 1. Gate 2. Collector Note 1: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Min. Recommended Footprint (Dimensions in inches and mm) 3. Emitter 4. Collector Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 1.14 1.91 1.40 2.13 .045 .075 .055 .084 C D 0.61 20.80 0.80 21.34 .024 .819 .031 .840 E e 15.75 5.45 16.13 BSC .620 .215 .635 BSC L L1 L2 L3 L4 4.90 2.70 2.10 0.00 1.90 5.10 2.90 2.30 0.10 2.10 .193 .106 .083 .00 .075 .201 .114 .091 .004 .083 ØP Q 3.55 5.59 3.65 6.20 .140 .220 .144 .244 R S 4.32 6.15 4.83 BSC .170 .242 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025