Advanced Technical Information HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE(sat) (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C110 TC = 110°C 35 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load ICM = 80 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md 300 Mounting torque (M3) 5 Symbol Test Conditions IC IC = 250 mA, VGE = 0 V = 750 mA 40N60C 40N60CD1 600 600 VGE(th) IC IC = 250 mA, VCE = VGE = 500 mA 40N60C 40N60CD1 2.5 2.5 I CES VCE = 0.8 • VCES TJ = 25°C VGE = 0 V; note 1 TJ = 25°C TJ = 125°C TJ = 125°C I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IT, VGE = 15 V © 2001 IXYS All rights reserved °C 40N60C 40N60CD1 40N60C 40N60CD1 G C Isolated Backside* E G = Gate, E = Emitter C = Collector Features l DCB Isolated mounting tab l Meets TO-247AD package Outline l High current handling capability l Latest generation HDMOSTM process l MOS Gate turn-on - drive simplicity g Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. BVCES E153432 * Patent pending 1.13/10Nm/lb.in. Weight ISOPLUS 247 V 5.0 5.0 V V 200 650 1 3 mA mA mA mA ±100 nA 2.5 V Applications l Uninterruptible power supplies (UPS) l Switched-mode and resonant-mode power supplies l AC motor speed control l DC servo and robot drives l DC choppers Advantages l Easy assembly l High power density l Very fast switching speeds for high frequency applications 98803 (01/01) IXGR 40N60C IXGR 40N60CD1 Symbol gfs Test Conditions IC = IT; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % Cies Coes Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VCE = 25 V, VGE 30 40N60C = 0 V, f = 1 MHz 40N60CD1 40 pF pF pF 65 pF 116 nC 23 nC 55 nC 25 ns Qg Qge IC = IT, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C tri IC = IT, VGE = 15 V 30 td(off) VCE = 0.8 • VCES, RG = Roff = 4.7 W tfi Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Eoff td(on) tri Inductive load, TJ = 125°C Eon IC = IT, VGE = 15 V td(off) tfi Eoff S 3300 310 370 Cres 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ns 100 150 ns 75 150 ns 0.85 1.70 mJ 25 ns 35 ns 40N60C 0.4 VCE = 0.8 • VCES, RG = Roff = 4.7 W 40N60CD1 1.2 Remarks: Switching times may increase for 150 VCE (Clamp) > 0.8 • VCES, higher TJ or 105 increased RG 1.2 RthJC ISOPLUS 247 OUTLINE mJ mJ ns ns Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 mJ 0.6 K/W RthCK 0.15 K/W Reverse Diode (FRED) (IXGH40N60CD1 only) Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF I F = IT, VGE = 0 V, Note 1 TJ = 150°C TJ = 25°C 1.3 1.8 V V IRM I F = IT, VGE = 0 V, VR = 100 V -diF/dt = 100 A/ms TJ = 100°C 7.5 A t rr I F = 1 A; -di/dt = 100 A/ms; VR = 30 V RthJC 3.5 ns 0.90 K/W Note: 1. Pulse test, tp £ 300 ms, duty cycle:d £ 2 % 2. IT = 40A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025