Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH ICM = 56 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) TO-247 Weight TO-247 TO-268 G E C (TAB) TO-247 AD (IXGH) G C E 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-268 (IXGT) 300 °C 6 4 g g G = Gate, E = Emitter, TAB C = Collector, TAB = Collector Features • International standard packages • IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 750 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.5 V 200 3 mA mA ±100 nA 2.0 V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw (isolated mounting screw hole) • Reduces assembly time and cost • High power density 98567A (7/00) 1-2 IXGH 28N60BD1 IXGT 28N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 9 C ies S 1500 pF 170 pF C res 40 pF Qg 80 100 nC 15 30 nC 30 40 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 14 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C 15 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W 25 ns td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Reverse Diode (FRED) Symbol Test Conditions ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 200 400 ns 3 6 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 15 ns 25 ns 1 mJ 400 ns 400 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 6 mJ N 1.5 2.49 0.087 0.102 0.25 IF = IC90, VGE = 0 V, TJ = 150°C Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 100 A/ms; VR = 30 V K/W TJ = 100°C TJ = 25°C 1.6 2.5 6 100 25 V V A ns ns Dim. 1 K/W Min. Recommended Footprint © 2000 IXYS All rights reserved TO-268AA (D3 PAK) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF RthJC Inches Min. Max. 400 0.83 K/W TO-247 Dim. Millimeter Min. Max. 200 RthJC RthCK TO-247 AD (IXGH) Outline A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-2