ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 13N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1 13 A ID90 TC = 90°C, Note 1 9 A ID(RMS) Package lead current limit 45 A EAS EAR ID ID 670 0.5 mJ mJ dv/dt VDS < VDSS, IF ≤ 17 A, TVJ = 150°C dS/dt = 100 A/µs PD TC = 25°C = 4A, TC = 25°C = 10A 6 V/ns 125 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +125 °C 300 °C 2500 V~ TL 1.6 mm (0.062 in.) from case for 10 s VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute FC Mounting force 11 ... 65 / 2.4 ...11 N/lb Weight 2 g VDSS = 800 V ID25 = 13 A Ω RDS(on) = 290 mΩ ISOPLUS 220TM G D S Isolated back surface* G = Gate, S = Source D = Drain, * Patent pending Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) l Low thermal resistance due to reduced chip thickness l Low drain to tab capacitance(<30pF) l Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. RDS(on) VGS = 10 V, ID = ID90, Note 3 VGS = 10 V, ID = ID90, Note 3 TJ = 125°C VGS(th) VDS = VGS, ID = 1 mA IDSS VDS = VDSS VGS = 0 V IGSS VGS = ±20 VDC, VDS = 0 250 550 2 TJ = 25°C TJ = 125°C 290 mΩ mΩ 4 V 25 µA µA 125 ±100 nA Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) l Power Factor Correction (PFC) l Welding l Inductive Heating l l Advantages l l l Easy assembly: no screws or isolation foils required Space savings High power density COOLMOS is a trademark of Infineon Technology. © 2001 IXYS All rights reserved 98865 (11/01) IXKC 13N80C Symbol Test Conditions Qg(on) 83 nC 9 nC Qgd 42 nC td(on) 25 ns Qgs VGS = 10 V, VDS = 640 V, ID = 17 A tr VGS = 10 V, VDS = 640V 15 ns td(off) ID = 17 A, RG = 4.7 Ω 75 ns 10 ns tf RthJC 1.0 RthCH K/W 0.30 Reverse Conduction Symbol Test Conditions VSD IF = 6.5 A, VGS = 0 V Note 3 ISOPLUS220 OUTLINE Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1 1.2 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025