Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS(on) 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873 S G ID25 ID90 TC = 25°C TC = 90°C 40 27 A A EAR EAS ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive 1 1.8 mJ J dv/dt VDS £ VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM PD TC = 25°C TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connetion torque (M4) MOSFET Symbol Conditions VDSS VGS = 0 V, ID = 1 mA IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) S D 6 V/ns 290 W -40 ... +150 150 -40 ... +150 °C °C °C 2500 V~ G = Gate S = Source Either source terminal at miniBLOC can be used as main or kelvin source Features ● miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly ● Fast CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness ● Enhanced total power density 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 TJ = 25°C TJ = 125°C V 0.5 50 VGS = 10 V, ID = 0.5 • ID25 25 70 µA µA mW Applications ● ● VGS(th) VDS = VGS, ID = 2.5 mA IGSS VGS = ±20 VDC, VDS = 0 3.5 5.5 V ±100 nA D = Drain ● ● ● Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating CoolMOS is a trademark of IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 031 Infineon Technologies AG. 1-2 IXKN 40N60C Symbol Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 S C iss Coss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz 8.8 3.15 36 nF nF pF Qg(on) Qgs Qgd VGS = 10 V, VDS = 350 V, ID = ID25 220 56 123 nC nC nC td(on) tr td(off) tf VGS = 10 V, VDS = 350 V, ID = 0.5 • ID25 RG = 1.8 W (External) 28 95 100 10 ns ns ns ns RthJC RthCK 0.43 0.05 Source-Drain Diode Symbol Conditions VSD IF = 0.5 • ID25, VGS = 0 V t rr IRM Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.9 IF = 47 A, -di/dt = 100 A/µs, VR = 350 V, TJ = 25°C Package K/W K/W 1.1 650 110 V ns A Characteristic Values Conditions Weight © 2000 IXYS All rights reserved min. typ. 30 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 max. g 2-2