CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS(on) 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt V ±20 V 75 50 A A TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 100A;diF/dt≤ 200A/µs TVJ = 150°C EAS EAR ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Symbol Conditions 6 VGS = 10 V; ID = ID90 VGSth VDS = 20 V; ID = 5 mA; IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C S D G = Gate S = Source 1.8 1 J mJ 30 3.5 5.5 0.1 VGS = ±20 V; VDS = 0 V miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly ● fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness ● Enhanced total power density 200 nA nC nC nC td(on) tr td(off) tf VGS= 10 V; VDS = 380 V; ID = 50 A; RG = 1 Ω 30 95 100 10 ns ns ns ns RthJC ● 0.05 mA mA 440 112 246 (reverse conduction) IF = 37.5 A; VGS = 0 V Features V VGS= 10 V; VDS = 350 V; ID = 100 A 0.9 1.1 V Applications ● ● ● 0.22 K/W D = Drain Either source terminal at miniBLOC can be used as main or kelvin source 35 mΩ Qg Qgs Qgd VF G V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon IGSS 600 ● ● Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating CoolMOS is a trademark of 130 Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 1-3 IXKN 75N60C Component miniBLOC, SOT-227 B Symbol Conditions VISOL IISOL ≤ 1 mA; 50/60 Hz TVJ Tstg Md mounting torque terminal connection torque (M4) Symbol Conditions RthCH with heatsink compound Weight Maximum Ratings 2500 V~ -40...+150 -40...+125 °C °C 1.5 1.5 Nm Nm Characteristic Values min. typ. max. 0.1 K/W 30 g M4 screws (4x) supplied Dim. © 2001 IXYS All rights reserved Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 2-3 IXKN 75N60C 250 0.16 VGS = 18 - 12 V A 10 V VGS = 8 V Ω 200 0.12 TVJ = 25°C ID TVJ = 25°C RDSon 150 0.08 8V 10 V 100 0.04 50 0 12-18 V 0.00 0 4 8 12 16 V 20 0 50 100 200 A 250 150 ID VDS Fig. 1: typ. Output Characteristics Fig. 2: typ. RDSon vs. Drain Current 0.10 250 Ω TVJ = 25°C A 0.08 ID 200 RDSon 0.06 TVJ = 125°C 150 ID = 50 A 0.04 100 0.02 50 0.00 0 -40 0 40 120 °C 160 80 0 2 4 6 TVJ Fig. 3: typ. RDSon vs. Junction Temperature Fig. 4: typ. Input Admittance 16 1 V 14 VGS 10 V 12 8 VGS K/W 0.1 12 10 ZthJC 0.01 8 6 single pulse 4 0.001 2 0 0 100 200 300 400 500 nC 600 700 QG Fig. 5: typ. Gate Charge Characteristic Curve © 2001 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 IXKN75N60C 0.01 0.1 1 s 10 t Fig. 6: typ. Transient Thermal Impedance 3-3