IXSH10N120AU1 PRELIMINARY DATA SHEET IC25 = 20 A VCES = 1200 V VCE(sat) = 4.0 V IGBT with Diode "S" Series - Improved SCSOA Capability C Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C 20 A I C90 T C = 90°C 10 A I CM T C = 25°C, 1 ms 40 A SSOA V GE = 15 V, TJ = 125°C, RG = 150 Ω ICM = 20 A (RBSOA) Clamped inductive load, L = 300 µH tsc T J = 125ºC, VCE = 720 V; VGE = 15V, RG = 150Ω PC T C = 25°C G E TO-247AD TJ @ 0.8 VCES Md = 3.25 mA, VGE = 0 V V GE(th) IC = 750 µA, VCE = VGE I CES VCE = 0.8 VCES ,V GE= 0 V Note 2 I GES VCE = 0 V, VGE = ±20 V V CE(sat) IC = IC90, VGE = 15 V W • High• voltage IGBT with guaranteed short circuit SOA capability. • IGBT with anti-parallel diode in one package • 2 generation HDMOS process -55 ... +150 °C 1.15/10 Nm/lb-in. 6 g 300 °C nd TM Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) IC 100 °C Max. Lead Temperature for Soldering (1.6mm from case for 10s) BV CES Features °C Weight E µs 150 Mounting torque . C 5 -55 ... +150 T JM T STG G Characteristic Values Min. Typ. Max. V Advantages 8 V 400 5 µA mA + 100 nA 4.0 V • Saves space (two devices in one package • Easy to mount(isolated mounting hole) • Reduces assembly time and cost • Runs cooler than equivalent 6-pack IGBTs • Easier to package to meet UL 1200 4 TJ = 25°C TJ = 125°C • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • DC choppers requirements ©1996 IXYS Corporation. All rights reserved. 94523C (1/96) IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr.15, D-68623 Lampertheim, Germany Phone: +49-6206-5030 Fax: +49-6206-503627 IXSH10N120AU1 Symbol gfs Test Conditions IC Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. = IC90, VCE = 10 V, 4 TO-247AD (IXSH) S Pulse test, t < 300 µs, duty cycle < 2 % I C(on) VGE = 15V, VCE = 10 V C ies VCE = 25 V, VGE = 0 V, f = 1 MHz 37 A 800 pF C oes 53 pF C res 15 pF 40 nC Q ge 12 nC Q gc 20 nC Qg IC = Ic90, VGE = 15 V, VCE = 0.5 VCES td(on) Inductive load, TJ = 25°C 100 ns 200 ns 250 ns tri IC td(off) RG = 120 Ω, VCLAMP = 0.8 VCES = IC90, VGE = 15 V, L = 300µH tfi Note 1 620 ns tc 750 ns Eoff 2.5 mJ td(on) Inductive load, TJ = 125°C 100 ns tri IC = IC90, VGE = 15 V, L = 300µH 200 ns E (on) RG = 120 Ω TBD mJ td(off) VCLAMP = 0.8 VCES tfi Note 1 tc Eoff 300 ns 1100 ns 1200 ns 4.0 mJ R thJC 1.25 K/W RthCK 0.25 Reverse Diode (FRED) VF K/W Characteristic Values (TJ = 25ºC unless otherwise specified) Min. Typ. Max. IF = IC90, VGE = 0V Pulse test, t< 300 µs, duty cycle < 2% 2.6 TJ = 125ºC V 2.3 trr IF = 1A; di/dt = -50A/µs; VR = 30V; TJ = 25ºC 50 70 ns IRM IF = IC90, VGE = 0V, -diF/dt = 100 A/µs 6.5 7.2 A trr TJ = 100ºC, VR = 540V 300 RthJC Notes: ns 2.0 K/W 1. Switching times may increase for VCE (Clamp) > 0.8 V CES, higher T J or Rg values. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-5030 Fax: +49-6206-503627