HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25 I C90 ICM TC = 25°C TC = 90°C TC = 25°C, 1 ms 48 24 96 A A A SSOA (RBSOA) V GE= 15 V, T VJ = 125°C, R G = 10 W Clamped inductive load, L = 100 mH I CM = 48 @ 0.8 V CES A t SC (SCSOA) V GE= 15 V, V CE = 360 V, T J = 125°C, R G = 82 W, non-repetitive 10 ms PC TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM T stg Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque, TO-247 Weight VCE(sat) 48 A 2.2 V 48 A 2.7 V TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features 300 °C 260 °C 1.13/10 Nm/lb.in. TO-247 AD 600 V 600 V IC25 6 • International standard package JEDEC TO-247 AD • High frequency IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM g Applications Symbol Test Conditions BV CES V GE(th) IC IC ICES V CE = 0.8 • V CES V GE = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 750 mA, V GE = 0 V = 1.5 mA, V CE = V GE IGES V CE = 0 V, V GE = ±20 V V CE(sat) IC = I C90, V GE = 15 V 600 3.5 T J = 25°C T J = 125°C IXSH 24N60U1 IXSH 24N60AU1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 6.5 V V 500 8 mA mA ±100 nA 2.2 2.7 V V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • Suitable for surface mounting • Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) • Reduces assembly time and cost 92820I (7/00) 1-2 IXSH 24N60U1 IXSH 24N60AU1 Symbol Test Conditions g fs IC = I C90 ; V CE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % I C(on) V GE = 15 V, V CE = 10 V C ies C oes C res V CE = 25 V, V GE = 0 V, f = 1 MHz Qg Q ge Q gc I C = I C90, V GE = 15 V, V CE = 0.5 V CES t d(on) t ri t d(off) t fi E off t d(on) t ri Eon t d(off) t fi E off Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Reverse Diode (FRED) Test Conditions S 65 A 1800 200 45 pF pF pF 75 20 35 24N60U1 24N60AU1 24N60U1 24N60AU1 100 200 1.8 475 600 450 4 3 ns ns mJ ns ns ns mJ mJ 0.25 0.83 K/W K/W Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms 10 VR = 360 V TJ = 125°C 150 IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C 35 © 2000 IXYS All rights reserved nC nC nC 24N60U1 24N60AU1 24N60AU1 VF RthJC 90 30 50 ns ns ns ns ns mJ Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 13 100 200 450 500 275 2 R thJC R thCK Symbol 9 TO-247 AD (IXSH) Outline 1.6 V 15 A ns ns 50 1 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2