High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE(sat) t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 55 A IC90 TC = 90°C 30 A ICM TC = 25°C, 1 ms 110 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES ICM = 60 A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive 10 ms PC TC = 25°C G 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md = = = = Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g 300 °C E TO-268 (D3) (IXST) C G E TO-264 (IXSK) G C G = Gate E = Emitter E C = Collector TAB = Collector Features • International standard packages: JEDEC TO-247, TO-264& TO-268 • Short Circuit SOA capability • High freqeuncy IGBT and antiparallel FRED in one package • New generation HDMOSTM process Applications Symbol Test Conditions BVCES IC = 750 mA, VGE = 0 V 600 VGE(th) IC = 2.5 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C IC = IC90 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 6 C V 7 V 200 3 mA mA ±100 nA 2.5 V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw (isolated mounting screw hole) • Surface mountable, high power case style • Reduces assembly time and cost • High power density 98518A (7/00) 1-2 IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies Coes C res VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1. Inductive load, TJ = 125°C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1 RthJC RthCK RthCK TO-247 TO-264 Reverse Diode (FRED) S 3100 240 50 pF pF pF 100 30 38 nC nC nC 30 30 90 70 0.7 ns ns ns ns mJ 150 120 1.2 35 35 0.5 150 140 1.2 ns ns mJ ns ns mJ 0.25 0.15 0.62 K/W K/W K/W Test Conditions VF IF = IC90, VGE = 0 V Note 2 IRM IF = 100A; VGE = 0 V; TJ = 100°C VR = 100 V; -diF/dt = 100 A/ms TJ = 150OC TJ = 150OC 2 IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C 35 1.7 2.5 V V 2.5 A 50 ns 1.0 K/W RthJC Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % TO-268AA (IXST) (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-264 AA (IXSK) Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr 10 TO-247 AD (IXSH) Outline Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2