IXYS IXSN55N120

High Voltage IGBT
IXSN 55N120A
VCES = 1200 V
IC25
= 110 A
4V
VCE(sat) =
3
Short Circuit SOA Capability
2
Preliminary Data
4
Symbol
Test Conditions
Maximum Ratings
VCES
T J = 25°C to 150°C
1200
VCGR
T J = 25°C to 150°C; RGE = 1 MW
1200
A
VGES
Continuous
±20
V
VGEM
Transient
±30
V
TC = 25°C
110
A
IC90
TC = 90°C
55
A
ICM
TC = 25°C, 1 ms
160
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 110
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C
RG = 22 W, non-repetitive
10
ms
PC
TC = 25°C
IGBT
500
W
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
2500
3000
V~
V~
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Md
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
Symbol
Test Conditions
BVCES
IC
= 6 mA, VGE = 0 V
1200
VGE(th)
IC
= 8 mA, VCE = VGE
4
ICES
VCE = 0.8 VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TJ = 25°C
TJ = 125°C
1
V
IC25
TJ
miniBLOC, SOT-227 B
V
8
V
1
2.5
mA
mA
±200
nA
4
V
2
4
3
1 = Emitter 
2 = Gate
3 = Collector
4 = Emitter 
 Either Emitter terminal can be used as Main or
Kelvin Emitter
Features
Ÿ International standard package
miniBLOC
Ÿ Aluminium-nitride isolation
- high power dissipation
Ÿ Isolation voltage 3000 V~
Ÿ UL registered E 153432
Ÿ Low VCE(sat)
- for minimum on-state conduction
losses
Ÿ Low collector-to-case capacitance
(<100 pF)
- reduces RFI
Ÿ Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
Ÿ AC motor speed control
Ÿ DC servo and robot drives
Ÿ DC choppers
Ÿ Uninterruptible power supplies (UPS)
Ÿ Switch-mode and resonant-mode
power supplies
Advantages
Ÿ Space savings
Ÿ Easy to mount with 2 screws
Ÿ High power density
95594B(6/97)
1-2
IXSN55N120A
Symbol
Test Conditions
gfs
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
= IC90; VCE = 10 V
32
45
S
340
A
8000
pF
miniBLOC, SOT-227 B
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IC(on)
VCE = 10 V, VGE = 15 V
C ies
590
pF
C res
120
pF
Qg
300
nC
80
nC
Qgc
140
nC
td(on)
140
ns
220
ns
400
Coes
Qge
t ri
td(off)
tfi
Eoff
VCE = 25 V, VGE = 0 V, f = 1 MHz
M4 screws (4x) supplied
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may increase for VCE
(Clamp) > 0.8 VCES, higher TJ or increased RG
td(on)
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
ns
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
ns
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
18
mJ
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
140
ns
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
700
1000
t ri
Inductive load, TJ = 125°C
250
ns
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
td(off)
IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W
600
ns
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
tsi
Remarks: Switching times may increase for VCE
(Clamp) > 0.8 VCES, higher TJ or increased RG
900
ns
950
ns
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
tc
E(on)
6
mJ
Eoff
25
mJ
0.05
0.25 K/W
K/W
RthJC
RthCK
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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