Advance Technical Information PolarHVTM Power MOSFET VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω IXTA 5N50P IXTP 5N50P IXTY 5N50P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 4.8 10 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 5 20 250 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 20 Ω 10 V/ns PD TC = 25°C 89 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Md Mounting torque Weight TO-220 TO-263 TO-252 (TO-220) VDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 50μA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) 500 3.0 VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved g g g Characteristic Values Min. Typ. Max. TJ = 125°C G S (TAB) TO-220 (IXTP) G (TAB) D S TO-252 (IXTY) G S (TAB) 1.13/10 Nm/lb.in. 4 3 0.8 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) TO-263 (IXTA) V 5.0 V ±100 nA 5 50 μA μA 1.4 Ω G = Gate S = Source D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99446(08/05) IXTA 5N50P IXTP 5N50P IXTY 5N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 3.0 4.7 S 620 pF 72 pF C rss 6.3 pF td(on) 18 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 18 ns td(off) RG = 20 Ω (External) 45 ns 16 ns 12.6 nC 4.3 nC 5.0 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 1.4 K/W (TO-220) 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 5 A ISM Repetitive 15 A VSD IF = IS, VGS = 0 V, -di/dt = 100 A/μs 1.5 V t rr Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 400 TO-263 (IXTA) Outline Pins: 1 - Gate 2,4 - Drain 3 - Source Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 TO-220 (IXTP) Outline ns TO-252 (IXTY) Outline Dim. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 Pins: 1 - Gate 3 - Source Millimeter Min. Max. 2.28 BSC 4.57 BSC Pins: 1 - Gate 3 - Source 0.090 BSC 0.180 BSC H L 9.40 0.51 10.42 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 1.02 1.27 2.92 0.025 0.035 0.100 0.040 0.050 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 2,4 - Drain IXTA 5N50P IXTP 5N50P IXTY 5N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 10 5 VGS = 10V VGS = 10V 9 7V 7V 8 4 6V 7 I D - Amperes I D - Amperes 6V 3 2 5V 1 6 5 4 3 5V 2 1 0 0 0 1 2 3 4 5 6 7 8 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 3.2 5 VGS = 10V VGS = 10V 2.8 7V R D S ( o n ) - Normalized 4 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 6V 3 2 1 5V 2.4 2 I D = 5A 1.6 I D = 2.5A 1.2 0.8 0 0.4 0 2 4 6 8 10 12 14 16 -50 18 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3.4 6.0 VGS = 10V 3 TJ = 125º C 5.0 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 4.0 3.0 2.0 1.4 TJ = 25º C 1.0 1 0.6 0.0 0 1 2 3 4 5 6 I D - Amperes © 2005 IXYS All rights reserved 7 8 9 10 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 5N50P IXTP 5N50P IXTY 5N50P Fig. 8. Transconductance Fig. 7. Input Adm ittance 7 9 8 6 4 TJ = 125º C 3 25º C -40º C 2 7 TJ = -40º C 6 125º C 25º C g f s - Siemens I D - Amperes 5 5 4 3 2 1 1 0 0 4 4.5 5 5.5 6 6.5 0 7 1 2 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 4 5 6 7 10 12 14 Fig. 10. Gate Charge 10 15 VG S - Volts 12 I S - Amperes 3 I D - Amperes 9 TJ = 125º C 6 TJ = 25º C 9 VDS = 250V 8 I D = 2.5A 7 I G = 10mA 6 5 4 3 3 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 V S D - Volts 6 8 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 T J = 150º C C iss 1000 C oss 100 T C = 25º C R DS(on) Limit I D - Amperes Capacitance - picoFarads f = 1MHz 10 25µs 100µs 1ms 1 C rss 10 DC 1 10ms 0.1 0 5 10 15 20 25 30 35 40 10 100 V D S - Volts V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 1000 IXTA 5N50P IXTP 5N50P IXTY 5N50P Fig. 13. Maximum Transient Thermal Resistance R ( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2005 IXYS All rights reserved 0.1 1 10