IXYS IXTP2N80

Advanced Technical Information
High Voltage MOSFET
IXTA 2N80
IXTP 2N80
= 800 V
=
2 A
= 6.2 Ω
RDS(on)
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
800
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
2
A
IDM
TC = 25°C, pulse width limited by TJM
8
A
Maximum Ratings
2
A
IAR
EAR
TC = 25°C
6
mJ
EAS
TC = 25°C
200
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 18 Ω
PD
TC = 25°C
TJ
5
V/ns
54
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Md
VDSS
ID25
Mounting torque
1.13/10
Weight
Nm/lb.in.
4
Maximum lead temperature for soldering
g
°C
300
TO-220AB (IXTP)
D (TAB)
GD
S
TO-263 AA (IXTA)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Ÿ International standard packages
Ÿ Low RDS (on) HDMOSTM process
Ÿ Rugged polysilicon gate cell structure
Ÿ Low package inductance (< 5 nH)
- easy to drive and to protect
Ÿ Fast switching times
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 µA
800
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
5.5
V
±100
nA
25
500
µA
µA
6.2
Ω
Applications
Ÿ Switch-mode and resonant-mode
power supplies
Ÿ Flyback inverters
Ÿ DC choppers
Advantages
Ÿ Space savings
Ÿ High power density
98541A 03/24/00
1-2
IXTA 2N80
IXTP 2N80
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
1.0
2.0
S
440
pF
56
pF
15
pF
15
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
18
ns
td(off)
RG
30
ns
tf
15
ns
Qg(on)
22
nC
5.5
12
Qgs
= 18Ω, (External)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Qgd
RthJC
2.3
RthCK
(IXTP)
Source-Drain Diode
0.5
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
nC
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
nC
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
K/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
K/W
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
2
A
ISM
Repetitive; pulse width limited by TJM
8
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.8
V
t rr
IF
= IS, -di/dt = 100 A/µs, VR = 100 V
510
TO-263 AA (IXTA) Outline
TO-220 AB (IXTP) Outline
ns
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54 BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
2-2