ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS(on) = 5.1 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V G D S Isolated back surface* ID25 TC = 25°C; Note 1 200 A ID90 TC = 90°C, Note 1 160 A IS25 TC = 25°C; Note 1, 2 200 A * Patent pending IS90 TC = 90°C, Note 1, 2 140 A Features ID(RMS) Package lead current limit 45 A l EAS TC = 25°C 500 mJ PD TC = 25°C 300 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +150 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s 300 °C VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~ FC Mounting force 11 ... 65 / 2.4 ...11 N/lb 2 Weight Symbol Test Conditions RDS(on) VGS = 10 V, ID = 100 A, Note 3 VGS = 10 V, ID = ID90, Note 3 VGS(th) VDS = VGS, ID = 2 mA IDSS VDS = VDSS VGS = 0 V IGSS VGS = ±20 VDC, VDS = 0 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 2 TJ = 25°C TJ = 125°C 5.1 mΩ mΩ 4 V 20 µA mA 0.2 ±200 nA G = Gate, S = Source Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF) l Unclamped Inductive Switching (UIS) rated Applications Automotive 42V and 12V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e.g. starter generator - DC-DC converters, e.g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar inverters l Battery powered systems - choppers or inverters for motor control in hand tools - battery chargers l Advantages l l l © 2000 IXYS All rights reserved D = Drain, Easy assembly: no screws or isolation foils required Space savings High power density 98761 (11/00) IXUC200N055 Symbol Test Conditions 200 Qg(on) Qgs VGS = 10 V, VDS = 14 V, ID = 100 A 44 nC nC 35 ns 115 ns td(on) tr VGS = 10 V, VDS = 0.5 VDSS, td(off) ID = 50 A, RG = 4.7 Ω tf nC 72 Qgd 230 ns 155 ns 0.5 RthJC K/W 0.30 RthCH Source-Drain Diode ISOPLUS220 OUTLINE Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VSD IF = 50 A, VGS = 0 V Note 3 0.9 trr IF = 150 A, di/dt = -200 A/µs, VDS = 30 V 80 1.3 V ns Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025