CS 8 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 25 A IT(AV)M = 16 A VRSM VDSM VRRM VDRM TO-64 V V 900 1300 800 1200 Type 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings IT(RMS) IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 Features Thyristor for line frequencies International standard package JEDEC TO-64 Planar glassivated chip Long-term stability of blocking currents and voltages ● 2 It 25 16 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 250 270 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 220 A A 2 TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 310 306 As A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 200 A2s A2s ● ● ● Applications Motor control Power converter AC power controller ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling ● (di/dt)cr TVJ = TVJM repetitive, IT = 48 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.2 A non repetitive, IT = IT(AV)M diG/dt = 0.2 A/ms (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) PGM TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 300 ms 150 A/ms ● 500 A/ms 1000 V/ms Dimensions in mm (1 mm = 0.0394") PG(AV) 10 5 0.5 W W W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C Md Mounting torque Weight ● 2.5 22 6 Nm lb.in. g Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-3 CS 8 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM £ 3 VT IT £ 1.6 V VT0 rT For power-loss calculations only (TVJ = 125°C) 1.0 18 V mW VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL = 33 A; TVJ = 25°C mA TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C £ £ £ £ 2.5 3.5 30 50 V V mA mA VD = 2/3 VDRM £ £ 0.2 1 V mA TVJ = 25°C; tP = 10 ms IG = 0.09 A; diG/dt = 0.09 A/ms £ 100 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ £ 80 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.09 A; diG/dt = 0.09 A/ms £ 2 ms tq TVJ = TVJM; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM typ. 60 ms RthJC RthJH DC current DC current 1.5 2.5 K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz 1.55 1.55 50 mm mm m/s2 Accessories: Nut M5 DIN 439/SW8 Lock washer A5 DIN 128 4 102 50 V ms A C B tgd B IGT: TVJ= 25°C 2 1 IT 101 30 IGT: TVJ= -40°C B lim. 40 3 IGT: TVJ= 0°C VG typ. lim. 20 100 typ. 10 TVJ= 125°C TVJ= 25°C A IGD: TVJ= 25°C IGD: TVJ=125°C 0 0 25 50 IG mA 75 Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe © 2000 IXYS All rights reserved 10-1 10-2 10-1 A 101 100 t Fig. 2 Gate controlled delay time tgd 0 0.0 0.5 1.0 1.5 V VT 2.0 Fig. 3 On-state characteristics 2-3 CS 8 300 20 1000 VR = 0 V 2 800 A s A 250 600 50Hz, 80%VRRM ITSM 200 A 15 IT(AV)M I2t TVJ = 45°C TVJ = 125°C 400 150 10 TVJ = 45°C 100 200 5 TVJ = 125°C 50 0 10-3 0 100 10-2 10-1 100 s 101 1 2 t 3 4 5 6 7 ms 8 910 t Fig. 5 I2t versus time (1-10 ms) Fig. 4 Surge overload current ITSM: crest value, t: duration 0 50 100 °C 150 Tcase Fig. 6 Maximum forward current at case temperature 180° sine 40 RthJA : W 2.8 K/W 30 3.2 K/W PT 3.6 K/W 3.6 K/W 20 5.2 K/W DC 180° sin 120° 60° 30° 10 7 K/W 0 0 5 10 15 20 25 A IT(AV)M 0 30 50 100 °C 150 Tamb Fig. 7 Power dissipation versus on-state current and ambient temperature RthJH for various conduction angles d: 3.5 K/W d = 30° d = 60° d = 120° 3.0 d = 180° 2.5 ZthJH d = DC 2.0 d RthJH (K/W) DC 180° 120° 60° 30° 2.5 2.79 2.95 3.17 3.32 Constants for ZthJH calculation: 1.5 i 1 2 3 4 5 6 1.0 0.5 0.0 10-3 10-2 10-1 100 101 102 t s Rthi (K/W) ti (s) 0.252 0.333 0.5 0.833 0.416 0.166 0.005 0.0225 0.145 0.43 2.75 23 103 Fig. 8 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 3-3