IXYS L468

Advanced Technical Information
Dual HiPerFREDTM
Epitaxial Diode
DSEE 55-24N1F
in ISOPLUS i4-PACTM
VRRM = 2400 V
IF(AV)M = 55 A
trr
= 220 ns
1
3
1
3
5
5
Features
Rectifier Bridge
Symbol
Conditions
Maximum Ratings
VRRM c
VRRM
IFAV
IF(AV)M
IFSM
TC = 90°C; sine 180°
TC = 90°C; d = 0.5 rectangular
TVJ = 25°C; t = 10 ms; sine 50 Hz
EAS
IAS = 16 A; LAS = 180 µH; TC = 25°C; non repetitive
Ptot
TC = 25°C
Symbol
Conditions
(per diode)
2400
1200
V
V
53
55
500
A
A
A
28
mJ
200
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VF
IF = 40 A; TVJ = 25°C
TVJ = 125°C
2.0
1.5
IR
VR = VRRM; TVJ = 25°C
TVJ = 125°C
IRM
trr
IF = 75 A; diF /dt = -750 A/µs; TVJ = 125°C
VR = 600 V
RthJC
(per diode)
2.5
V
V
1
1
mA
mA
79
220
A
ns
0.63 K/W
• HiPerFREDTM Epitaxial Diodes
- fast and soft reverse recovery –
low switching losses
- avalanche rated
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- enlarged creepage between pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• rectifiers
- high frequency rectifiers, output
rectifiers of switched mode power
supplies
- mains rectifiers with minimized
emission of disturbances
• diodes in snubber networks
• high voltage diodes using the series
connection in the component
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
117
c Diodes connected in series
1-2
DSEE 55-24N1F
Component
Symbol
Dimensions in mm (1 mm = 0.0394")
Conditions
Maximum Ratings
TVJ
Tstg
VISOL
IISOL ≤ 1 mA; 50/60 Hz
FC
mounting force with clip
Symbol
Conditions
CP
coupling capacity between
shorted pins and mounting tab in the case
d S , dA
d S , dA
pin - pin
pin - backside metal
RthCH
with heatsink compound
Weight
© 2001 IXYS All rights reserved
-55...+150
-55...+125
°C
°C
2500
V~
20...120
N
Characteristic Values
min.
typ. max.
40
5.5
5.5
pF
mm
mm
0.15
K/W
9
g
2-2