IXYS L507

DSEP 2x 101-04A
HiPerFREDTM Epitaxial Diode
IFAV = 2x 100 A
VRRM = 400 V
trr
= 30 ns
with soft recovery
VRSM
VRRM
V
V
400
400
miniBLOC, SOT-227 B
Type
DSEP 2x 101-04A
D4
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 60°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
TVJ = 25°C; non-repetitive
IAS = 4 A; L = 180 µH
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TVJ
TVJM
Tstg
100
100
A
A
1000
A
2
mJ
Features
●
●
0.4
A
-40...+150
150
-40...+150
°C
°C
°C
200
W
●
2500
V~
●
●
●
●
●
●
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
mounting torque (M4)
terminal connection torque (M4)
Weight
typical
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
30
Applications
●
g
●
●
Symbol
IR
①
VF ②
RthJC
RthCH
Conditions
Characteristic Values
typ.
max.
VR = VRRM; TVJ = 25°C
TVJ = 150°C
IF = 100 A;
1
4
TVJ = 125°C
TVJ = 25°C
1.24
1.54
0.6
mA
mA
V
V
with heatsink compound
0.1
K/W
K/W
trr
IF = 1 A; -di/dt = 400 A/µs;
VR = 30 V; TVJ = 25°C
30
ns
IRM
VR = 100 V; IF = 200 A; -diF/dt = 100 A/µs
TVJ = 100°C
5.5
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
6.8
A
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
●
●
●
●
●
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
●
●
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
313
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSEP 2x 101-04A
300
2400
A
nC
250
2000
IF
50
TVJ = 100°C
VR = 200 V
IRM
Qr
200
1600
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
150
IF = 200 A
IF = 100 A
IF = 50 A
1200
TVJ = 100°C
VR = 200 V
A
40
IF = 200 A
IF = 100 A
IF = 50 A
30
20
100
800
50
400
0
0.0
0.5
1.0
0
100
2.0 V 2.5
1.5
10
0
A/µs 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge
Qr versus -diF/dt
160
2.0
trr
140
Kf
IF = 200 A
IF = 100 A
IF = 50 A
120
1.0
200
400
600 A/µs
800 1000
-diF/dt
Fig. 3 Typ. peak reverse current
IRM versus -diF/dt
60
TVJ = 100°C
VR = 200 V
ns
1.5
0
tfr
1.50
TVJ = 100°C
IF = 100 A
V
50
µs
1.25
tfr
VFR
40
1.00
30
0.75
20
0.50
100
IRM
0.5
80
Qr
0.0
10
60
0
40
80
120 °C 160
0.25
VFR
0
0
TVJ
200
400
600
800 1000
A/µs
0
200
400
-diF/dt
Fig. 4 Typ. dynamic parameters
Qr, IRM versus TVJ
Fig. 5 Typ. recovery time
trr versus -diF/dt
0.00
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage
VFR and tfr versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
4
ZthJC
0.01
Rthi (K/W)
ti (s)
0.212
0.248
0.063
0.077
0.0055
0.0092
0.0007
0.0391
0.001
0.0001
0.0001
DSEP 2x101-04A
0.001
0.01
0.1
s
1
10
t
313
Fig. 7 Transient thermal resistance junction to case
2-2
© 2003 IXYS All rights reserved