MCC 170 ITRMS = 2x 350 A ITAVM = 2x 203 A VRRM = 1200-1800 V Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 3 Type 6 7 1 5 4 2 3 2 MCC MCC MCC MCC 170-12io1 170-14io1 170-16io1 170-18io1 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 76 5 4 1 Maximum Ratings Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins ● òi2dt (di/dt)cr (dv/dt)cr 350 203 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 5400 5800 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 5000 5500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 146 000 140 000 A2s A2s 125 000 126 000 2 As A2s 100 A/ms TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) TVJ = TVJM f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A, diG/dt = 1 A/ms repetitive, IT = 660 A ● Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches ● ● ● ● non repetitive, IT = ITAVM 500 A/ms 1000 V/ms tP = 30 ms tP = 500 ms PGAV VRGM TVJ TVJM Tstg -40...+130 130 -40...+125 °C °C °C 3000 3600 V~ V~ VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Typical including screws Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● W W W V Weight ● ● TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM ● ● 120 60 20 10 PGM ● t = 1 min t=1s ● 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 170 Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C VT0 rT 10 1: IGT, TVJ = 130 140°C 40 mA 1.65 V For power-loss calculations only (TVJ = 130°C) 0.8 1 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 220 V V mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms 2 ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM 200 ms QS IRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms 550 235 mC A RthJC RthJK dS dA a per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 6 2 5 1 1 4 4: PGM = 20 W 5: PGM = 60 W IGD, TVJ = 130 140°C 0.1 10-3 10-2 6: PGM = 120 W 10-1 100 101 A IG 102 Fig. 1 Gate trigger characteristics other values see Fig. 8/9 typ. 0.164 0.082 0.204 0.102 K/W K/W K/W K/W 12.7 mm 9.6 mm 50 m/s2 100 TVJ = 25°C µs tgd typ. Limit 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 0.01 Dimensions in mm (1 mm = 0.0394") 0.1 A 1 10 IG Fig. 2 Gate trigger delay time M8x20 © 2000 IXYS All rights reserved 2-4 MCC 170 106 6000 ITSM A 50 Hz 80 % VRRM TVJ = 45°C TVJ = 130°C 5000 400 I2dt ITAVM A IFAVM DC 180° sin 120° 60° 30° A2 s 300 4000 TVJ = 45°C 105 3000 200 TVJ = 130°C 2000 100 1000 0 0.001 104 0.01 s 0.1 1 0 ms 1 t t Fig. 4 òi2dt versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Ptot 400 RthKA K/W W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 300 10 0 25 50 75 100 125 °C 150 TC Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) 200 DC 180° sin 120° 60° 30° 100 0 0 100 200 300 A 0 25 50 75 100 125 °C 150 TA ITAVM/IFAVM 2000 Ptot RthKA K/W W 0.04 0.06 0.08 0.1 0.15 0.2 0.3 1500 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 Circuit B6 3xMCC170 500 0 0 200 400 600 A IdAVM © 2000 IXYS All rights reserved 0 25 50 75 100 125 °C 150 TA 3-4 MCC 170 2000 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Ptot W RthKA K/W 0.04 0.06 0.08 0.1 0.15 0.2 0.3 1500 1000 Circuit W3 3xMCC170 500 0 0 100 200 300 400 A 0 25 50 75 125 °C 150 100 TA IRMS 0.25 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 0.20 RthJC for various conduction angles d: d 0.15 DC 180° 120° 60° 30° 30° 60° 120° 180° DC 0.10 0.05 0.160 0.171 0.180 0.203 0.247 Constants for ZthJC calculation: i 0.00 10-3 RthJC (K/W) 10-2 10-1 100 101 s 102 t 0.30 1 2 3 4 Rthi (K/W) ti (s) 0.0077 0.0413 0.096 0.0149 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W 0.25 ZthJK RthJK for various conduction angles d: 0.20 d DC 180° 120° 60° 30° 0.15 30° 60° 120° 180° DC 0.10 0.05 0.200 0.211 0.220 0.243 0.287 Constants for ZthJK calculation: i 0.00 10-3 RthJK (K/W) 10-2 10-1 100 101 s t © 2000 IXYS All rights reserved 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0077 0.0413 0.096 0.0149 0.04 0.00054 0.098 0.54 12 12 4-4