MDD 220 IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 800-1800 V High Power Diode Modules VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type 1 MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 MDD 220-18N1 Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 ∫i dt Maximum Ratings 450 270 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8500 9000 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7500 8000 A A 2 TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 000 340 000 As A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 280 000 260 000 A2s A2 s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws Symbol Test Conditions IRRM TVJ = TVJM; VR = VRRM 40 mA VF IF = 600 A; TVJ = 25°C 1.4 V VT0 rT For power-loss calculations only TVJ = TVJM 0.75 0.9 V mΩ RthJC per diode; DC current per module per diode; DC current per module 0.129 0.065 0.169 0.0845 K/W K/W K/W K/W RthJK t = 1 min t=1s 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 Features • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits Dimensions in mm (1 mm = 0.0394") g Characteristic Values other values see Fig. 6/7 QS IRM TVJ = 125°C, IF = 400 A; -di/dt = 50 A/µs 760 275 µC A dS dA a Creepage distance on surface Strike distance through air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 3 2 2 Symbol 2 1 20 12 Threaded spacer for higher Anode/Cathode 14 construction: Type ZY 250, material brass 419 VRSM 1-3 MDD 220 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 ∫i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) IXYS reserves the right to change limits, test conditions and dimensions 2-3 419 Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load © 2004 IXYS All rights reserved MDD 220 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.15 Fig. 6 Transient thermal impedance junction to case (per diode) 30° DC K/W RthJC for various conduction angles d: ZthJC d 0.10 DC 180° 120° 60° 30° 0.05 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133 Constants for ZthJC calculation: i 10-2 10-1 100 101 102 s t 0.20 30° DC 0.0099 0.168 0.456 RthJK for various conduction angles d: 0.15 d DC 180° 120° 60° 30° 0.10 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 Constants for ZthJK calculation: 0.05 i 0 0.00 10-3 0.0035 0.0165 0.1091 Fig. 7 Transient thermal impedance junction to heatsink (per diode) K/W ZthJK 1 2 3 ti (s) 10-2 10-1 100 101 s t IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 102 1 2 3 4 Rthi (K/W) ti (s) 0.0035 0.0165 0.1091 0.04 0.0099 0.168 0.456 1.36 419 0.000 10-3 Rthi (K/W) 3-3