MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 ∫i2dt 1 1 Maximum Ratings 520 310 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 10500 11200 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9200 9800 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 551000 527000 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 423 000 403 000 A2s A2s -40...+150 150 -40...+125 °C °C °C • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies 3000 3600 V~ V~ Advantages TVJ TVJM Tstg • International standard package • Direct copper bonded Al2O3-ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered E 72873 Applications VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Weight Mounting torque (M6) Terminal connection torque (M8) Typical including screws 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g • Simple mounting • Improved temperature and power cycling • Reduced protection circuits Symbol Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394") IRRM TVJ = TVJM; VR = VRRM 30 VF IF = 600 A; TVJ = 25°C 1.32 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 0.6 V mΩ RthJC per diode; DC current per module per diode; DC current per module 0.12 0.06 0.16 0.08 K/W K/W K/W K/W QS IRM TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs 700 260 µC A dS dA a Creeping distance on surface Creepage distance in air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 RthJK t = 1 min t=1s Features mA M8x20 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 423 Data according to IEC 60747 and refer to a single diode unless otherwise stated. 1-3 MDD 312 106 10000 IFSM It A IFAVM 50 Hz 80 % VRRM TVJ = 45°C TVJ = 150°C 8000 550 A 500 VR = 0 V 2 A2s DC 180° sin 120° 60° 30° 450 400 350 6000 300 TVJ = 45°C 250 TVJ = 150°C 4000 200 150 2000 100 50 0 0.001 10 0.01 s 0.1 1 5 0 1 ms 10 0 25 50 75 100 t t Fig. 2 I2t versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration 125 150 TC Fig. 3 Maximum forward current at case temperature 600 600 Ptot W RthKA K/W 500 400 500 IRM 400 300 300 DC 180° sin 120° 60° 30° 200 TVJ = 125°C VR = 600 V A 0.06 0.1 0.2 0.3 0.4 0.6 0.8 IF = 400 A 200 100 100 0 0 100 200 300 400 500 A 0 25 50 75 100 125 0 150 0 TA IFAVM 50 100 A/µs 150 200 diF/dt Fig. 5 Typ. peak reverse current IRM versus -diF/dt Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode) 25 1750 Ptot W RthKA K/W R L 1250 1000 20 trr 15 750 IF = 400 A 10 Circuit B2U 2 x MDD312 500 TVJ = 125°C VR = 600 V µs 0.04 0.06 0.08 0.12 0.2 0.3 0.5 1500 5 250 0 100 200 300 400 500 600 A 0 25 50 IdAVM 75 100 125 150 TA Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, test conditions and dimensions. 2-3 0 0 50 100 A/µs 150 200 diF/dt Fig. 7 Typ. recovery time trr versus -diF/dt 423 0 © 2004 IXYS All rights reserved MDD 312 3000 RthKA K/W W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 2500 Ptot 2000 1500 Circuit B6U 3 x MDD312 1000 500 0 0 200 400 600 800 A IdAVM 0 25 50 75 100 125 TA 150 Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.20 RthJC for various conduction angles d: K/W 0.15 ZthJC 0.10 30° 60° 120° 180° DC 0.05 0.00 10-3 10-2 10-1 100 d RthJC (K/W) DC 180°C 120°C 60°C 30°C 0.120 0.128 0.135 0.153 0.185 Constants for ZthJC calculation: i 1 2 3 4 101 s Rthi (K/W) ti (s) 0.0058 0.031 0.072 0.0112 0.00054 0.098 0.54 12 102 t Fig. 9 Transient thermal impedance junction to case (per diode) RthJK for various conduction angles d: 0.25 K/W 0.20 ZthJK 0.15 d RthJK (K/W) DC 180°C 120°C 60°C 30°C 0.160 0.168 0.175 0.193 0.225 Constants for ZthJK calculation: 0.10 30° 60° 120° 180° DC 0.05 0.00 10-3 10-2 10-1 100 i 1 2 3 4 5 101 s Rthi (K/W) ti (s) 0.0058 0.031 0.072 0.0112 0.04 0.00054 0.098 0.54 12 12 102 t IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 423 Fig. 10Transient thermal impedance junction to heatsink (per diode) 3-3