MKI 50-06 A7 IC25 = 72 A = 600 V VCES VCE(sat) typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA 13 T5 T1 Preliminary Data D1 D5 9 1 10 2 16 T2 14 T6 D2 D6 11 3 12 4 17 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 600 V ± 20 V 72 50 A A ICM = 100 VCEK ≤ VCES A VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C 10 µs 225 W • NPT IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages td(on) tr td(off) tf Eon Eoff 1.9 2.2 4.5 2.4 V V 6.5 V 0.6 mA mA 200 nA 0.7 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω 50 60 300 30 2.3 1.7 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A 2800 120 pF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved Typical Applications • motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding • supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger 0.55 K/W 225 IGES Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. • space savings • reduced protection circuits • package designed for wave soldering 1-4 MKI 50-06 A7 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.6 1.3 IRM trr IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 25 90 RthJC (per diode) 72 45 Conduction A A Characteristic Values min. typ. max. 1.8 V V A ns 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.82 V; R0 = 28 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 0.89 V; R0 = 8 mΩ Thermal Response Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 5 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight © 2002 IXYS All rights reserved 6 6 IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.42 K/W Cth2 = 1.252 J/K; Rth2 = 0.131 K/W Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.277 K/W mΩ mm mm 0.02 K/W 180 g Dimensions in mm (1 mm = 0.0394") 2-4 MKI 50-06 A7 150 IC 150 VGE= 17V 15V 13V A 120 A 120 IC 90 VGE= 17V 15V 13V 90 11V 60 11V 60 9V 30 9V 30 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 VCE V 5 0 6 Fig. 1 Typ. output characteristics 1 2 3 4 VCE 5 V 6 Fig. 2 Typ. output characteristics 90 150 A 75 A 120 IF IC 60 90 45 TVJ = 125°C 60 TVJ = 25°C 30 TVJ = 125°C TVJ = 25°C 30 15 VCE = 20V 0 4 6 8 10 12 VGE 0 0.0 14 V 16 0.5 1.0 1.5 V 2.0 VF Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 150 50 20 V 40 A 15 VGE 120 ns trr IRM 30 90 20 60 trr 10 5 VCE = 300V IC = 50A TVJ = 125°C VR = 300V IF = 30A 10 IRM MWI5006A7 0 0 0 40 80 120 QG Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved nC 160 30 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MKI 50-06 A7 10.0 Eon 4 100 td(on) mJ ns mJ 7.5 75 3 t Eoff 400 300 t tr td(off) 5.0 2 50 200 VCE = 300V VGE = ±15V VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C 2.5 RG = 22Ω TVJ = 125°C 1 25 Eon 0.0 0 40 tf 0 0 120 A 80 IC 0 Fig. 7 Typ. turn on energy and switching times versus collector current 4 td(on) mJ 40 80 IC 100 0 120 A Fig. 8 Typ. turn off energy and switching times versus collector current 3 mJ 80 600 ns ns Eon Eon 3 60 t Eoff Eoff 2 400 VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 2 1 0 10 20 30 40 RG t td(off) tr 40 1 20 50 Ω 60 0 VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 0 10 20 30 0 50 Ω 60 40 RG Fig.10 Typ. turn off energy and switching times versus gate resistor 120 10 A K/W 90 200 tf Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM ns Eoff ZthJC diode 1 IGBT 0.1 60 0.01 30 single pulse 0.001 RG = 22 Ω TVJ = 125°C 0 0 100 200 300 400 500 600 VCE 700 V Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 MWI5006A7 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 4-4