MWI 25-12 A7 MWI 25-12 A7T IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Preliminary Data 1 2 Type: NTC - Option: MWI 25-12 A7 MWI 25-12 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7 8 11 12 T 17 IGBTs Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 1200 V ± 20 V 50 35 A A ICM = 70 VCEK ≤ VCES A 10 µs VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C ● ● ● ● ● ● ● ● ● ● Advantages 225 W ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.2 2.6 2.7 V V ● Typical Applications ● ● VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 4.5 6.5 V 2 mA mA 200 nA 2 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 47 Ω 100 70 500 70 3.8 2.8 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A 1650 120 pF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved space savings reduced protection circuits package designed for wave soldering ● AC motor control AC servo and robot drives power supplies 0.55 K/W 412 Symbol 1-4 MWI 25-12 A7 MWI 25-12 A7T Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 25 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 25 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 20 200 RthJC (per diode) 50 33 Conduction A A Characteristic Values min. typ. max. 2.7 V V A ns 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.5 V; R0 = 40.7 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 16.0 mΩ Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions 5 Creepage distance on surface Strike distance in air RthCH with heatsink compound Free Wheeling Diode (typ.) Cth1 = 0.081 J/K; Rth1 = 0.973 K/W Cth2 = 0.915 J/K; Rth2 = 0.217 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. Rpin-chip dS dA IGBT (typ.) Cth1 = 0.136 J/K; Rth1 = 0.418 K/W Cth2 = 1.309 J/K; Rth2 = 0.132 K/W 6 6 Weight mΩ mm mm 0.02 K/W 180 g IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 412 Higher magnification on page B3 - 72 2-4 MWI 25-12 A7 MWI 25-12 A7T 60 60 VGE=17V TJ = 25°C A 50 15V 13V IC VGE=17V TJ = 125°C 15V A 50 IC 40 13V 40 11V 11V 30 30 20 20 9V 9V 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 60 IC 3.5 V Fig. 2 Typ. output characteristics 80 VCE = 20V TJ = 125°C A70 TJ = 25°C A 50 2.5 3.0 VCE IF 40 60 TJ = 25°C 50 40 30 30 20 20 10 10 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics 4 V Fig. 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE = 25A A VGE 15 ns IRM trr trr 200 40 10 20 TJ = 125°C VR = 600V IF = 25A IRM 5 MWI 25-12A7 0 0 20 40 60 80 100 120 140 nC QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 412 0 100 3-4 MWI 25-12 A7 MWI 25-12 A7T 14 6 140 12 mJ 120 ns Eon 10 100 8 tr 4 Eon 2 VCE = 600V VGE = ±15V 60 RG = 47Ω TJ = 125°C 40 0 0 mJ 5 t Eoff td(off) 400 t 4 10 20 30 40 3 VCE = 600V VGE = ±15V 300 2 RG = 47Ω TJ = 125°C 200 20 1 0 0 50 A 0 0 10 20 30 40 mJ 10 Eon 8 50 A IC Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 5 240 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C 100 tf IC 12 ns 500 80 td(on) 6 600 Eoff td(on) ns Eon 180 tr t 6 1500 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C mJ 4 Eoff ns td(off) 1200 Eoff t 3 900 2 600 1 300 120 4 60 2 0 0 40 80 120 160 RG 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 40 80 10 A 60 K/W 1 ZthJC RG = 47Ω TJ = 125°C VCEK < VCES 40 30 120 0 200 Ω 240 160 RG Fig.10 Typ. turn off energy and switching times versus gate resistor 70 ICM 50 tf 0 0 200 Ω 240 diode 0.1 IGBT 0.01 20 0.001 10 single pulse 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0.0001 0.00001 0.0001 MWI 25-12A7 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 412 0 4-4