VVZ 24 IdAVM = 27 A VRRM = 1200-1600 V Three Phase Half Controlled Rectifier Bridge 2 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1200 1400 1600 1 6 3 1 Type 5 VVZ 24-12io1 VVZ 24-14io1 VVZ 24-16io1 4 3 2 6 7 8 5 7 4 8 Test Conditions IdAV IdAVM IFRMS, ITRMS TK = 100°C; module module per leg IFSM, ITSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 21 27 16 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 290 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 430 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 365 350 A2s A2s 150 A/ms Features ● ● ● ● ● Applications ● ● ● (di/dt)cr (dv/dt)cr TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/3 • IdAV diG/dt = 0.3 A/ms ● A/ms 1000 V/ms 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 °C °C °C 3000 3600 V~ V~ 2-2.5 18-22 28 Nm lb.in. g TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) VRGM PGM TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms £ £ £ PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Electric drives and auxiliaries Advantages ● ● 500 Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Soldering terminals UL registered E 72873 Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") 303 Symbol 1-3 VVZ 24 Symbol Test Conditions Characteristic Values IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 30 A, TVJ = 25°C VT0 rT For power-loss calculations only (TVJ = 125°C) VGT VD = 6 V; IGT TVJ = TVJM TVJ = 25°C £ £ 5 0.3 mA mA £ 1.45 V 1 V 16 mW VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C TVJ = 125°C £ £ £ £ £ 1.0 1.2 65 80 50 V V mA mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM £ £ 0.2 5 V mA IL IG = 0.3 A; tG = 30 ms diG/dt = 0.3 A/ms TVJ = 25°C TVJ = -40°C TVJ = 125°C £ £ £ 150 200 100 mA mA mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ £ 100 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms £ 2 ms tq Qr TVJ = 125°C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM typ. 150 75 ms mC RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module 2.1 0.35 2.7 0.45 K/W K/W K/W K/W RthJH dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration © 2003 IXYS All rights reserved 7 mm 7 mm 50 m/s2 2-3 VVZ 24 10 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V VG 1 1 2 3 6 4 5 4: PGAV = 0.5 W 0.1 1 Fig. 1 Surge overload current per chip IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per chip 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 125°C 10 100 1000 IG mA Fig. 3 Gate trigger characteristics Triggering: Fig. 4 Power dissipation versus direct output current and ambient temperature 3 ZthJK K/W ZthJK 2 Constants for ZthJK calculation 1 i 0 10-3 1 2 3 10-2 10-1 100 101 Rthi (K/W) ti (s) 0.17 1.4 1.1 0.028 0.44 2.6 102 s Fig. 5 Transient thermal impedance junction to heatsink © 2003 IXYS All rights reserved 750 t 3-3