KDV275 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO FOR UHF/VHF BAND. K L H F Excellent Linearity (CV Curve) A Low Series Resistance 1 E High Capacitance Ratio : C1V/C4V =3.4(Min.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage ) SYMBOL RATING UNIT VR 28 V DIM A B C D M Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 M E F G H I 1. ANODE 2. CATHODE MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + J K MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + L 2 +4/-2 M 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=10 A 20 - - V Reverse Current IR VR=16V - - 5 nA C1V VR=1V, f=1MHz 15.40 16.60 17.90 C2V VR=2V, f=1MHz 8.50 10.20 11.90 C4V VR=4V, f=1MHz 3.60 4.30 5.05 Capacitance Ratio K C1V/C4V, f=1MHz 3.4 - - Series Resistance rS CT=8pF, f=470MHz - - 0.7 Capacitance pF CLASSIFICATION OF CAPACITANCE GRADE GRADE CAPACITANCE (C2V) UNIT A 8.5 9.15 pF B 9.05~9.85 pF C 9.75 10.65 pF D 10.55~11.35 pF E 11.25~11.90 pF 2003 1. 27 Revision No : 0 Marking Type Name Grade C 1/2 KDV275 IR - VR C T - VR 100p 30 REVERSE CURRENT IR (A) CAPACITANCE C T (pF) Ta=25 C f=1MHz 10 5 3 Ta=85 C 10p Ta=55 C 1p Ta=25 C 100f 10f 0 1 2 3 4 4 0 - VR 20 1 SERIES RESISTANCE r s (Ω) FIGURE OF MERIT Q 16 rs - f 500 300 f=50MHz f=100MHz 100 f=300MHz 50 f=470MHz 30 V R =4V Ta=25 C 0.7 0.5 10 0 1 2 3 4 50 100 500 300 REVERSE VOLTAGE V R (V) FREQUENCY f (MHz) C(Ta)/C(25 C) - VR ∆C/Ta - VR 1.10 1K 3K 1.06 Ta=85 C ∆C/Ta (ppm/ C) VARIATION OF CAPACITANCE C(Ta)/C(25 C) 12 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) Q 8 Ta=55 C 1.02 Ta=25 C 0.98 Ta=-15 C Ta=-55 C 1k 500 300 0.94 Ta=-55 C~+85 C f=1MHz 0.90 100 0 1 2 3 REVERSE VOLTAGE VR (V) 2003 1. 27 Revision No : 0 4 0 1 2 3 4 REVERSE VOLTAGE VR (V) 2/2