KIC7SZU04FU SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA INVERTER (UNBUFFER) FEATURES High Output Drive : B 16mA (Typ.) @VCC=4.5V B1 Super High Speed Operation : tPD=2.4ns(Typ.) @VCC=5V, 50pF 5 1 A 2 C Supply Voltage Data Retention : VCC=1.5 5.5V. A1 C Operation Voltage Range : VCC(opr)=1.8 5.5V. D 4 H 3 T DIM A A1 B B1 C D G H T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 G MAXIMUM RATINGS (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Supply Voltage Range VCC -0.5 6 V DC Input Voltage VIN -0.5 6 V DC Output Voltage VOUT Input Diode Current IIK 20 mA Output Diode Current IOK 20 mA DC Output Current IOUT 50 mA DC VCC/Ground Current ICC 50 mA Power Dissipation PD 200 mW Storage Temperature Tstg -65 150 Lead Temperature (10s) TL 260 -0.5 VCC+0.5 USV V MARKING Type Name T N PIN CONNECTION (TOP VIEW) 2002. 10. 14 Revision No : 1 VCC OUT Y 5 4 1 2 3 NC IN A GND 1/3 KIC7SZU04FU LOGIC DIAGRAM IN A 1 OUT Y DC ELECTRICAL CHARACTERISTICS CHARACTERISTIC High-Level Input Voltage Low-Level Input Voltage SYMBOL TEST CONDITION VIH - VIL Ta=25 VOH MIN. TYP. MAX. MIN. MAX. 1.8 0.85 VCC - - 0.85 VCC - 2.3 5.5 0.8 VCC - - 0.8 VCC - - - 0.15 VCC - 0.15 VCC 3.0 5.5 - - 0.2 VCC - 0.2 VCC 1.8 1.6 1.8 - 1.6 - 2.3 2.1 2.3 - 2.1 - 3.0 2.7 3.0 - 2.7 - 4.5 4.0 4.5 - 4.0 - IOH=-4mA 2.3 1.9 2.14 - 1.9 - IOH=-8mA 3.0 2.4 2.75 - 2.4 - IOH=-12mA 3.0 2.3 2.61 - 2.3 - IOH=-16mA 4.5 3.8 4.13 - 3.8 - 1.8 - 0 0.2 - 0.2 2.3 - 0 0.2 - 0.2 3.0 - 0 0.3 - 0.3 4.5 - 0 0.5 - 0.5 IOL=4mA 2.3 - 0.1 0.3 - 0.3 IOL=8mA 3.0 - 0.17 0.4 - 0.4 IOL=12mA 3.0 - 0.25 0.55 - 0.55 IOL=16mA 4.5 - 0.26 0.55 - 0.55 - - 1 - 10 - - IOL=100 A Low-Level Output Voltage VOL VIN=VIH Input Leakage Current IIN VIN=5.5V or GND Quiescent Supply Current ICC VIN=VCC or GND 2002. 10. 14 Revision No : 1 0 5.5 5.5 2 - UNIT V 1.8 2.7 - VIN=VIL 85 VCC (V) IOH=-100 A High-Level Output Voltage Ta=-40 20 V V V A 2/3 KIC7SZU04FU AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns) CHARACTERISTIC Propagation Delay Time SYMBOL tPLH TEST CONDITION Power Dissipation Capacitance 85 VCC (V) MIN. TYP. MAX. MIN. MAX. 1.8 1.0 - 8.5 1.0 9.0 2.5 0.2 0.8 - 6.2 0.8 6.5 RL=1M 3.3 0.3 0.5 - 4.5 0.5 4.8 5.0 0.5 0.5 - 3.9 0.5 4.1 CL=50pF, 3.3 0.3 1.0 - 6.0 1.5 6.5 RL=500 5.0 0.5 0.8 - 5.0 0.8 5.5 - 4.5 - - - 3.3 - 6.3 - - - 3.5 - 9.5 - - - tPHL CPD Ta=-40 CL=15pF, CIN Input Capacitance Ta=25 - 0 5.5 UNIT ns pF (Note 1) Note 1 : CPD defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. ICC(opr)=CPD 2002. 10. 14 VCC fIN+ICC Revision No : 1 3/3