KEC KIC7WZ125

KIC7WZ125FK
SEMICONDUCTOR
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
TECHNICAL DATA
DUAL BUS BUFFER
FEATURES
・Super High Speed : tPD=2.6ns(Typ.) into 50pF at VCC=5V.
・High Output Driver : ±24mA at VCC=3V.
・Power Down High Impedance inputs/outputs.
B
・Outputs are Overvoltage Tolerant is 3-STATE mode.
C
・Wide Operating Voltage Range : VCC(opr)=1.65~5.5V.
DIM
A
B
8
D D
A
E
D
1
4
5
CHARACTERISTIC
SYMBOL
RATING
UNIT
Power Supply Voltage
VCC
-0.5~7
V
DC Input Voltage
VIN
-0.5~7
V
DC Output Voltage
VOUT
-0.5~7
V
Input Diode Current
IIK
-50
mA
Output Diode Current
IOK
-50
mA
DC Output Current
IOUT
±50
mA
DC VCC/ground Current
ICC
±100
mA
Power Dissipation
PD
200
mW
Storage Temperature Range
Tstg
-65~150
℃
Lead Temperature (10s)
TL
260
℃
D
E
F
G
0.5
0.2+0.05/-0.04
_ 0.1
0.7+
_ 0.04
0.12 +
H
0 ~ 0.1
F
MAXIMUM RATINGS (Ta=25℃)
C
MILLIMETERS
_ 0.1
2.0 +
_ 0.1
3.1+
_ 0.1
2.3 +
H
G
US8
MARKING
Type Name
Z125
Lot No.
Logic Diagram
G1
A1
G2
A2
(1)
EN
(6)
(2)
Y1
(7)
(3)
(5)
Y2
PIN CONNECTION(TOP VIEW)
Truth Table
INPUTS
OUTPUTS
G
A
Y
H
X
Z
L
L
L
L
H
H
G1
1
8
VCC
A1
2
7
G2
Y2
3
6
Y1
GND
4
5
A2
X : Don t Care
Z : High Impedance
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Revision No : 0
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KIC7WZ125FK
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
Supply Voltage
VCC
Input Voltage
VIN
RATING
1.65~5.5
1.5~5.5
Topr
Operating Temperature
V
(Note1)
0~VCC
VOUT
Output Voltage
UNIT
V
0~VCC
(Note2)
0~5.5
(Note3)
V
-40~85
℃
0~20 (VCC=1.8±0.15V, 2.5±0.2V)
tr, tf
Input Rise and Fall Time
0~10 (VCC=3.3V±0.3V)
ns/V
0~5 (VCC=5.0V±0.5V)
Note1 : Data retention only.
Note2 : Active State.
Note3 : 3-STATE
ELECTRICAL CHARACTERISTICS (DC Characteristics)
CHARACTERISTIC
High Level
TEST CONDITION
SYMBOL
VIH
-
Ta=25℃
MIN.
TYP.
MAX.
MIN.
MAX.
1.65~1.95
0.75×
VCC
-
-
0.75×
VCC
-
-
-
0.7×VCC
-
2.3~5.5 0.7×VCC
Input
Voltage
Low Level
VIL
1.65~1.95
-
-
0.25×
VCC
-
0.25×
VCC
2.3~5.5
-
-
0.3×VCC
-
0.3×VCC
1.65
1.55
1.65
-
1.55
-
2.3
2.2
2.3
-
2.2
-
3.0
2.9
3.0
-
2.9
-
4.5
4.4
4.5
-
4.4
-
IOH=-4mA
1.65
1.29
1.52
-
1.29
-
IOH=-8mA
2.3
1.9
2.15
-
1.9
-
IOH=-16mA
3.0
2.4
2.80
-
2.4
-
IOH=-24mA
3.0
2.3
3.68
-
2.3
-
IOH=-32mA
4.5
3.8
4.20
-
3.8
-
1.65
-
0
0.1
-
0.1
2.3
-
0
0.1
-
0.1
3.0
-
0
0.1
-
0.1
-
IOH=-100μA
High Level
VOH
VIN=
VIH or VIL
Output
Voltage
IOL=100μA
Low Level
VOL
VIN=
VIH or VIL
Ta=-40~85℃
VCC(V)
UNIT
V
V
4.5
-
0
0.1
-
0.1
IOL=4mA
1.65
-
0.08
0.24
-
0.24
IOL=8mA
2.3
-
0.10
0.30
-
0.30
IOL=16mA
3.0
-
0.15
0.40
-
0.40
IOL=24mA
3.0
-
0.22
0.55
-
0.55
IOL=32mA
4.5
-
0.22
0.55
-
0.55
0~5.5
-
-
±0.1
-
±1
μA
1.65~5.5
-
-
±0.5
-
±5
μA
V
Input Leakage Current
IIN
VIN=5.5V or GND
3-STATE Output Leakage
IOZ
VIN=VIH or VIL
0≤VOUT≤5.5V
Power Off Leakage Current
IOFF
VIN or VOUT=5.5V
0.0
-
-
1
-
10
μA
Quiescent Supply Current
ICC
VIN=5.5V or GND
1.65~5.5
-
-
1
-
10
μA
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Revision No : 0
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KIC7WZ125FK
Noise Characteristics
CHARACTERISTIC
TEST CONDITION
SYMBOL
Ta=-25℃
VCC(V)
TYP.
MAX.
UNIT
Quiet Output Maximum Dynamic VOL
VOLP (Note 1)
CL=50pF
5.0
-
1.0
V
Quiet Output Minimum Dynamic VOL
VOLV (Note 1)
CL=50pF
5.0
-
1.0
V
Quiet Output Minimum Dynamic VOH
VOHV (Note 1)
CL=50pF
5.0
-
4.0
V
Minimum HIGH Level Dynamic Input Voltage
VIHD (Note 1)
CL=50pF
5.0
-
3.5
V
Maximum LOW Level Dynamic Input Voltage
VILD (Note 1)
CL=50pF
5.0
-
1.5
V
Note 1 : Characteristic guaranteed by design.
AC Characteristics
CHARACTERISTIC
Propagation Delay
AN to YN
(Figures 1,3)
TEST CONDITION
SYMBOL
tPLH
tPHL
CL=15pF, RD=1MΩ
S1=Open
Ta=25℃
Ta=-40~85℃
VCC(V)
MIN.
TYP.
MAX.
MIN.
MAX.
1.8±0.15
2.0
-
12.0
2.0
13.0
2.5±0.2
1.0
-
7.5
1.0
8.0
3.3±0.3
0.8
-
5.2
0.8
5.5
5.0±0.5
0.5
-
4.5
0.5
4.8
UNIT
ns
tPLH
tPHL
CL=50pF, RD=500Ω
S1=Open
3.3±0.3
1.2
-
5.7
1.2
6.0
5.0±0.5
0.8
-
5.0
0.8
5.3
tOSLH
tOSHL
CL=50pF, RD=500Ω
S1=Open
3.3±0.3
-
-
1.0
-
1.0
5.0±0.5
-
-
0.8
-
0.8
1.8±0.15
3.0
-
14.0
3.0
15.0
tPZL
tPZH
CL=50pF,
RD, RU=500Ω
S1=GND for tPZH
S1=V1 for tPZL
V1=2×VCC
2.5±0.2
1.8
-
8.5
1.8
9.0
3.3±0.3
1.2
-
6.2
1.2
6.5
5.0±0.5
0.8
-
5.5
0.8
5.8
CL=50pF,
RD, RU=500Ω
S1=GND for tPZH
S1=V1 for tPZL
V1=2×VCC
1.8±0.15
2.5
-
12.0
2.5
13.0
2.5±0.2
1.5
-
8.0
1.5
8.5
3.3±0.3
0.8
-
5.7
0.8
6.0
5.0±0.5
0.3
-
4.7
0.3
5.0
CIN
0
-
2.5
-
-
-
pF
Output Capacitance
COUT
5.0
-
4
-
-
-
pF
Power Dissipation
Capacitance (Figure 2)
CPD
3.3
-
10
-
-
-
5.0
-
12
-
-
-
Output to Output Skew
(Figures 1,3)
(Note 2)
Output Enable Time
(Figures 1,3)
Output Disable Time
(Figures 1,3)
Input Capacitance
tPLZ
tPHZ
(Note 3)
ns
ns
ns
ns
pF
Note 2 : Characteristic guaranteed by design. tOSLH=|tPLHmax-tPLHmin| ; tOSHL=|tPHLmax-tPHLmin|.
Note 3 : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current
consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic
operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC
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Revision No : 0
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KIC7WZ125FK
AC Loading and Waveforms
VCC
VIN
OPEN
GND
OE INPUT
RU
t r =3ns
CL
VCC
90%
50%
10%
INPUT
tw
OUTPUT
INPUT
t f =3ns
GND
t PHL
t PLH
VOH
RD
OUTPUT
50%
50%
VOL
C L includes load and stray capacitance
Input PRR=1.0MHz ; t w =500ns
t f =3ns
FIGURE 1. AC Test Circuit
VCC
t r =3ns
90%
50%
10%
t PLZ
OE INPUT
t PZL
A
VCC
GND
VTRI
INPUT
OE
OUTPUT
50%
OUTPUT
t PZL
VOL +0.3V
t PLZ
VOL
VOH
Input=AC Waveform ; t r =tf =1.8ns;
PRR=10MHz ; Duty Cycle=50%
FIGURE 2. I CCD Test Circuit
2002. 5. 13
Revision No : 0
OUTPUT
50%
VOH - 0.3V
VTRI
FIGURE 3. AC Waveforms
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