KEC KIC7WZ38FK

SEMICONDUCTOR
KIC7WZ38FK
TECHNICAL DATA
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
DUAL 2 INPUT NAND GATE (OPEN DRAIN)
FEATURES
High output drive : 24mA(min.) @VCC=3V.
Super high speed operation : tpZL 2.2ns(typ.) @VCC=5V, 50pF.
B
Operation voltage range : VCC(opr)=1.65~5.5V.
Latch-up performance :
200V or more (EIAJ)
1
A
E
D
2000V or more (MIL)
DIM
A
B
8
Power down protection is provided on all inputs and outputs.
D D
ESD performance :
C
500mA or more
5
D
E
F
G
0.5
0.2+0.05/-0.04
_ 0.1
0.7+
_ 0.04
0.12 +
H
0 ~ 0.1
F
4
C
MILLIMETERS
_ 0.1
2.0 +
_ 0.1
3.1+
_ 0.1
2.3 +
MARKING
Type Name
H
Z38
G
Lot No.
US8
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
PIN CONNECTION(TOP VIEW)
)
SYMBOL
RATING
UNIT
Power Supply Voltage
VCC
-0.5~6
V
DC Input Voltage
VIN
-0.5~6
V
DC Output Voltage
VOUT
-0.5~6
V
Input Diode Current
IIK
-20
mA
Output Diode Current
IOK
-20
mA
DC Output Current
IOUT
50
mA
DC VCC/ground Current
ICC
50
mA
Power Dissipation
PD
200
mW
Storage Temperature Range
Tstg
-65 150
Lead Temperature (10s)
TL
260
2002. 3. 7
Revision No : 1
1A 1
8
1B
2
7 1Y
2Y 3
6 2B
GND 4
5 2A
VCC
1/3
KIC7WZ38FK
Truth Table
Logic Diagram
A
B
Y
L
L
H*
L
H
H*
H
L
H*
H
H
L
IN A
&
IN B
OUT Y
* : High impedance
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
Supply Voltage
VCC
Input Voltage
VIN
RATING
1.65~5.5
1.5~5.5
Topr
Operating Temperature
V
(Note1)
0~5.5
VOUT
Output Voltage
UNIT
V
0~5.5
(Note2)
0~VCC
(Note3)
V
-40~85
0~20 (VCC=1.8V 0.15V,
2.5V
dt/dv
Input Rise and Fall Time
0.2V)
ns/V
0~10 (VCC=3.3V 0.3V)
0~5 (VCC=5.5V 0.5V)5
Note1 : Data retention only, Note2 : VCC=0V, Note3 : Low state
ELECTRICAL CHARACTERISTICS
DC Characteristics
TEST CONDITION
CHARACTERISTIC
High Level
VIH
-
Low Level
VIL
Low Level
VOL
TYP.
MAX.
MIN.
MAX.
1.65~1.95
0.75
VCC
-
-
0.75
VCC
-
-
-
-
0.25
VCC
VCC
0.7
VCC
V
0.25
VCC
2.3~5.5
-
-
1.65
-
0
0.1
-
0.1
2.3
-
0
0.1
-
0.1
3.0
-
0
0.1
-
0.1
4.5
-
0
0.1
-
0.1
IOH=4mA
1.65
-
0.08
0.24
-
0.24
IOH=8mA
2.3
-
0.1
0.3
-
0.3
IOH=16mA
3.0
-
0.15
0.4
-
0.4
IOH=24mA
3.0
-
0.22
0.55
-
0.55
IOH=32mA
4.5
-
0.22
0.55
-
0.55
0.3
VCC
-
-
-
-
VIN=VIL
UNIT
MIN.
1.65~1.95
IOH=100 A
Voltage
Ta=-40~85
VCC(V)
2.3~5.5 0.7
Input
Voltage
Output
Ta=25
SYMBOL
-
0.3
VCC
V
Input Leakage Current
IIN
VIN=5.5V or GND
0~5.5
-
-
1
-
10
A
Off-state Carrent
IOZ
VIN=VIL,
VOUT=VCC or GND
5.5
-
-
5
-
10
A
Power Off Leakage Current
IOFF
VIN or VOUT=5.5V
0.0
-
-
1
-
10
A
Quiescent Supply Current
ICC
VIN=5.5V or GND
1.65~5.5
-
-
1
-
10
A
2002. 3. 7
Revision No : 1
2/3
KIC7WZ38FK
AC Characteristics (unless otherwise specified, Input : tr=tf=3ns)
CHARACTERISTIC
TEST CONDITION
SYMBOL
Ta=25
VCC(V)
MIN.
TYP.
MAX.
MIN.
MAX.
0.15
2.0
5.2
9.2
2.0
9.6
2.5 0.2
1.5
3.5
5.7
1.5
6.1
3.3 0.3
1.0
2.8
4.1
1.0
4.5
5.0 0.5
0.5
2.2
3.4
0.5
3.6
1.8
0.15
2.0
4.6
9.2
2.0
9.6
2.5 0.2
1.5
3.2
5.7
1.5
6.1
3.3 0.3
1.0
2.4
4.1
1.0
4.5
1.8
tPZL
CL=50pF, RL=500
Propagation delay time
tPLZ
Input Capacitance
Output Capacitance
Power Dissipation
Capacitance
CL=50pF, RL=500
Ta=-40~85
UNIT
ns
ns
5.0 0.5
0.5
1.6
3.4
0.5
3.6
CIN
-
0~5.5
-
3.0
-
-
-
pF
COUT
-
0~5.5
-
2.5
-
-
-
pF
3.3
-
6.9
-
-
-
5.5
-
13
-
-
-
CPD
(Note)
pF
Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption
without load. Average operating current can be obtained by the equation : ICC(opr)=CPD VCC fIN+ICC/2
TEST CIRCUIT
AC Waveform
t r 3ns
t r 3ns
VCC x 2
RL
MEASURE
OUTPUT
CL
RL
50%
10%
INPUT
VOH
t pZL
Revision No : 1
GND
OUTPUT
50%
2002. 3. 7
V CC
90%
50%
V OL + 0.3V
t pLZ
VOL
3/3