SEMICONDUCTOR KTA1381 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. A B D C E FEATURES High breakdown voltage : VCEO F 300V. Small reverse transfer capacitance and G excellent high frequency characteristic. H : Cre=2.3pF (VCB=30V, f=1MHz) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V DC IC -100 Pulse ICP -200 Collector Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range L M ) CHARACTERISTIC DIM A B C D E F G H J K L M N O P J Complementary KTC3503. 1.5 PC 7 Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE mA MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 W ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-200V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 A DC Current Gain hFE (Note) VCE=-10V, IC=-10mA 60 - 200 fT VCE=-30V, IC=-10mA - 150 - MHz Transition Frequency Collector Output Capacitance Cob VCB=-30V, IE=0, f=1MHz - 3.1 - pF Reverse Transfer Capacitance Cre VCB=-30V, IE=0, f=1MHz - 2.3 - pF Collector-Emitter Saturation Voltage VCE(sat) IC=-20mA, IB=-2mA - - -0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=-20mA, IB=-2mA - - -1.0 V Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -300 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -300 - - V Base-Emitter Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V Note : hFE Classification 2003. 7. 24 O:60 120, Y:100 Revision No : 3 200 1/3 KTA1381 -20 -10 I B =-140µA I B =-120µA -16 I B =-100µA I B =-80µA -12 I B =-60µA -8 I B =-40µA -4 0 I C - VCE COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - VCE I B =-20µA I B =0 -2 0 -4 -6 -8 -10 IB=-60µA IB=-50µA -8 IB=-40µA -6 IB=-30µA -4 IB=-20µA IB=-10µA -2 0 IB=0 0 COLLECTOR-EMITTER VOLTAGE VCE (V) -2 -4 500 DC CURRENT GAIN h FE -80 Ta=75 C Ta=25 C Ta=-2 5 C COLLECTOR CURRENT I C (mA) VCE =-10V -60 -40 -20 0 -0.2 -0.4 -0.6 -0.8 Ta=75 C Ta=25 C 100 Ta=-25 C 50 30 10 -0.5 -1.0 VCE =-10V 300 -1 -3 50 30 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2003. 7. 24 50 VCE =-30V 100 10 -0.5 Revision No : 3 -30 -100 C Ob - VCB OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) fT - IC 300 -10 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 500 -10 h FE - I C -120 -100 -8 COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE 0 -6 -100 f T =1MHz 30 10 5 3 1 -0.5 -1 -3 -10 -30 -100 COLLECTOR BASE VOLTAGE V CB (V) 2/3 KTA1381 C re - V CB REVERSE TRANSFER CAPACITANCE C re (pF) f T =1MHz 30 10 5 3 1 -0.5 -1 -3 -10 -30 -100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 50 -1 I C /I B=10 -0.5 -0.3 -0.1 -0.05 -0.03 -0.5 VBE(sat) - I C COLLECTOR CURRENT I C (mA) -10 S* OP Ta ER =2 AT 5 C ION -30 0µ BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) -200 50 -200 D Tc C O =2 PE 5 RA C T S* -100 -50 S* -30 DC 0m -0.5 I C MAX.(CONTINUOUS) -100 1m -1 -10 -100 I C MAX.(PULSED)* 10 -3 -3 -30 -300 -5 -1 -10 SAFE OPERATING AREA IC /I B =10 -0.3 -0.5 -3 COLLECTOR CURRENT I C (mA) COLLECTOR BASE VOLTAGE VCB (V) -10 -1 IO N * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -5 -3 COLLECTOR CURRENT I C (mA) -3 -10 -30 -100 -300 COLLECTOR EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 2003. 7. 24 8 (1) Tc=Ta (1) 6 INFINITE HEAT SINK (2) NO HEAT SINK 4 2 0 (2) 0 50 100 150 200 AMBIENT TEMPERATURE Ta ( C) Revision No : 3 3/3