SEMICONDUCTOR KTC2020D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A FEATURES I C J D Low Collector Saturation Voltage B : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. O K E Q Complementary to KTA1040D/L. M Straight Lead (IPAK, "L" Suffix) H P F 1 ) RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A Junction Temperature Storage Temperature Range PC DPAK I A C J D Tc=25 3. EMITTER W 20 Tj 150 Tstg -55 150 B Dissipation 1.0 2. COLLECTOR K Collector Power MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX 1. BASE SYMBOL Ta=25 3 Q CHARACTERISTIC 2 P H G E MAXIMUM RATING (Ta=25 L F DIM A B C D E F H I J K L M O P Q F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC IPAK ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 A Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 100 V(BR)CEO IC=50mA, IB=0 60 - - A V VCE=5V, IC=0.5A 100 - 300 - Collector-Emitter Breakdown Voltage hFE (Note) DC Current Gain VCE(sat) Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency V 1.0 V fT VCE=5V, IC=0.5A - 30 - MHz VCB=10V, IE=0, f=1MHz - 35 - pF - 0.65 - 15Ω - 1.3 - VCC =30V - 0.65 - tf Fall Time 2003. 3. 27 1.0 0.7 tstg Storage Time Y:100~200, 0.5 - ton Turn-on Time Note : hFE Classification - VCE=5V, IC=0.5A Cob Collector Output Capacitance Switching Time IC=2A, IB=0.2A VBE OUTPUT 20µsec IB1 INPUT IB2 IB1=-I B2 =0.2A DUTY CYCLE < = 1% I B1 I B2 S GR:150~300. Revision No : 5 1/2 KTC2020D/L 3.0 90 80 70 2.5 60 50 40 30 2.0 20 1.5 I B =10mA 1.0 COMMON EMITTER Tc=25 C 0.5 0 Pc - Ta COLLECTOR POWER DISSIPATION P C (W) COLLECTOR CURRENT I C (A) I C - V CE 0 0 1 2 3 4 5 6 7 8 32 28 24 20 Tc =2 5 16 12 C 8 4 0 Ta=25 C 0 25 50 75 100 125 150 175 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) h FE - I C SAFE OPERATING AREA 200 10 300 0.05 0.1 1 0.3 3 10 COLLECTOR CURRENT IC (A) 1 0.5 * SINGLE NONREPETITIVE PULSE Tc=25 C 0.3 0.1 VCEO MAX. 10 0.02 COMMON EMITTER VCE =5V COLLECTOR CURRENT I C (A) 30 3 S* 50 I C MAX (CONTINUOUS) 1m 100 5 * mS 10 S* N IO 0m 10 AT ER 5 C OP c=2 DC T DC CURRENT GAIN h FE I C MAX(PULSED)* Tc=100 C C Tc=25 C Tc=-25 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 1 0.5 COMMON EMITTER I C /I B =10 0.3 100 Tc= 0.1 C Tc=25 C Tc=-25 C 0.05 0.03 0.02 0.05 0.1 0.3 1 3 5 10 COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 5 2/2